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北京大学 [21]

华南理工大学 [2]

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期刊论文 [8]

会议论文 [2]

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	A device adaptive inflow boundary condition for Wigner equations of quantum transport 其他 2014-01-01 Jiang, Haiyan; Lu, Tiao; Cai, Wei 收藏 \| 浏览/下载：3/0 \| 提交时间：2015/11/11 Frensley inflow boundary condition Wigner function Resonant tunneling diode DOUBLE-GATE MOSFETS MONTE-CARLO APPROACH GREENS-FUNCTION SIMULATION MODEL MASS
	Analytic Yet Continuous Surface Potential versus Voltage Equation of Intrinsic Nanoscale Surrounding-Gate MOSFETs and Solution from Accumulation to Strong Inversion Region 期刊论文 journal of computational and theoretical nanoscience, 2013 Ye, Yun; He, Jin; Zhang, Aixing; He, Hongyue; Chen, Qin; Wang, Hao 收藏 \| 浏览/下载：7/0 \| 提交时间：2015/11/16 Non-Classical CMOS Surrounding-Gate MOSFETs Device Physics Surface Potential Accuracy Continuity Issue SYMMETRIC DOUBLE-GATE MODEL CHARGE NONEQUILIBRIUM CAPACITANCE
	A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors 期刊论文 journal of computational and theoretical nanoscience, 2011 Zhang, Xukai; He, Jin; Zhang, Lining; Zhang, Jian; Ma, Yong; Wu, Wen; Wang, Wenping; Wang, Ruonan; Gu, Xin; Chan, Mansun 收藏 \| 浏览/下载：3/0 \| 提交时间：2015/11/13 Bulk MOSFET Limit Non-Classical CMOS Double-Gate MOSFET Device Physics Surface Potential-Based Model MOSFETS DEVICE
	A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs 其他 2009-01-01 He, Jin; Zhang, Lining; Zhang, Jian; Ma, Chenyue; Liu, Feilong; Chan, Mansun 收藏 \| 浏览/下载：4/0 \| 提交时间：2015/11/10 non-classical MOS transistor surrounding-gate MOSFETs device physics surface potential model non-charge-sheet approximation MOS-TRANSISTOR CHARGE PERFORMANCE
	A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs 其他 2009-01-01 He, Jin; Zhang, Lining; Zheng, Rui; Zhang, Jian; Chan, Mansun 收藏 \| 浏览/下载：3/0 \| 提交时间：2015/11/10 non-classical CMOS surface potential DG-MOSFETs device physics compact modelling ULSI circuit simulation DRAIN-CURRENT DG MOSFETS CHARGE MODEL EQUATION NONEQUILIBRIUM APPROXIMATION TRANSISTORS CAPACITANCE VOLTAGE
	Computation Efficient yet Accurate Surface Potential Based Analytic Model for Symmetric DG MOSFETs to Predict Current-Voltage Characteristics 其他 2009-01-01 Song, Yan; Zhang, Lining; Zhang, Jian; Zhou, Xingye; Che, Yuchi; He, Jin; Chan, Mansun 收藏 \| 浏览/下载：4/0 \| 提交时间：2015/11/13 non-classical MOS transistor double-gate MOSFETs device physics surface potential model computation efficiency DOUBLE-GATE MOSFETS SOI MOSFETS CHARGE
	An explicit carrier-based compact model for nanowire surrounding-gate MOSFET simulation 期刊论文分子模拟, 2008 He, J.; Bian, W.; Zhang, J.; Feng, J.; Zhang, X.; Wu, W.; Chan, M. 收藏 \| 浏览/下载：3/0 \| 提交时间：2015/11/10 molecular devices nanowire non-classical CMOS surrounding-gate MOSFET device model
	A Complete Surface Potential-Based Current-Voltage and Capacitance-Voltage Core Model for Undoped Surrounding-Gate MOSFETs 其他 2008-01-01 He, Jin; Song, Yan; Liu, Feng; Liu, Feilong; Zhang, Lining; Zhang, Jian; Zhang, Xing 收藏 \| 浏览/下载：4/0 \| 提交时间：2015/11/12 non-classical MOSFET surrounding-gate MOSFETs device physics surface potential model non-charge-sheet approximation
	非掺杂对称双栅的基于完整表面电势的核心模型期刊论文半导体学报, 2008 何进; 张立宁; 张健; 傅越; 郑睿; 张兴收藏 \| 浏览/下载：3/0 \| 提交时间：2015/11/12 体MOSFET极限非传统CMOS 双栅MOSFET 器件物理表面势模型 bulk MOSFET limit non-classical CMOS double-gate MOSFET device physics surface potential-based model
	A Complete Surface Potential-Based Current-Voltage and Capacitance-Voltage Core Model for Undoped Surrounding-Gate MOSFETs 其他 2008-01-01 Jin He; Yan Song; Feng Liu; Feilong Liu; Lining Zhang; Jian Zhang; Xing Zhang 收藏 \| 浏览/下载：3/0 \| 提交时间：2017/12/03 non-classical MOSFET surrounding-gate MOSFETs device physics surface potential model non-charge-sheet approximation non-classical MOSFET surrounding-gate MOSFETs device physics surface potential model non-charge-sheet approximation

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