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	A device adaptive inflow boundary condition for Wigner equations of quantum transport
	Jiang, Haiyan ; Lu, Tiao ; Cai, Wei
	2014
关键词	Frensley inflow boundary condition Wigner function Resonant tunneling diode DOUBLE-GATE MOSFETS MONTE-CARLO APPROACH GREENS-FUNCTION SIMULATION MODEL MASS
英文摘要	In this paper, an improved inflow boundary condition is proposed for Wigner equations in simulating a resonant tunneling diode (RTD), which takes into consideration the band structure of the device. The original Frensley inflow boundary condition prescribes the Wigner distribution function at the device boundary to be the semi-classical Fermi-Dirac distribution for free electrons in the device contacts without considering the effect of the quantum interaction inside the quantum device. The proposed device adaptive inflow boundary condition includes this effect by assigning the Wigner distribution to the value obtained from the Wigner transform of wave functions inside the device at zero external bias voltage, thus including the dominant effect on the electron distribution in the contacts due to the device internal band energy profile. Numerical results on computing the electron density inside the RTD under various incident waves and non-zero bias conditions show much improvement by the new boundary condition over the traditional Frensley inflow boundary condition. (C) 2013 Elsevier Inc. All rights reserved.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000329118500041&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Computer Science, Interdisciplinary Applications; Physics, Mathematical; SCI(E); 3; ARTICLE; wcai@uncc.edu; 773-786; 258
语种	英语
出处	SCI
出版者	计算物理学杂志
内容类型	其他
源URL	[http://hdl.handle.net/20.500.11897/217860]
专题	数学科学学院 工学院
推荐引用方式 GB/T 7714	Jiang, Haiyan,Lu, Tiao,Cai, Wei. A device adaptive inflow boundary condition for Wigner equations of quantum transport. 2014-01-01.

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