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浏览/检索结果: 共5条，第1-5条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Ambipolar transport in Ni-catalyzed InGaAs nanowire field-effect transistors for near-infrared photodetection 期刊论文 Nanotechnology, 2021, 卷号: 32, 期号: 14 作者:  Guo,Yanan;  Liu,Dong;  Miao,Chengcheng;  Sun,Jiamin;  Pang,Zhiyong 收藏  |  浏览/下载：31/0  |  提交时间：2021/03/29 Ambipolar Transport  Field-effect Transistors  Ingaas Nanowires  Cmos-compatible Catalyst  Surface State  Near-infrared Photodetection   Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation 期刊论文 2016, 2016 谭桢; 赵连锋; 王敬; 许军; Tan Zhen; Zhao Lian-Feng; Wang Jing; Xu Jun 收藏  |  浏览/下载：8/0 AN EXPERIMENTAL AND ANALYTICAL METHOD TO OBSERVE THE POLYSILICON NANOWIRE MOSFET THRESHOLD VOLTAGE 其他 2016-01-01 Sheu, Gene; Yang, Shao-Ming; Aanand; Imam, Syed Sarwar; Jen, Fan Ming; Lu, Shao Wei 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 nanowire  undoped-polysilicon  native gate oxide  drain saturation current  back-gate  mean-free path  TRANSISTORS  TRANSPORT   Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology 期刊论文 MICROELECTRONIC ENGINEERING, 2016, 卷号: 163, 页码: 49-54 作者:  Wang, GL;  Qin, CL;  Yin, HX;  Luo, J;  Duan, NY 收藏  |  浏览/下载：48/0  |  提交时间：2017/03/02 FinFET  SiGe selective epitaxy  RPCVD  High-k & metal gate   Surface Passivation and Interface Properties of Bulk GaAs and Epitaxial-GaAs/Ge Using Atomic Layer Deposited TiAlO Alloy Dielectric 期刊论文 ACS APPLIED MATERIALS & INTERFACES, 2013, 卷号: 5, 期号: 3, 页码: 949-957 作者:  Dong, JR(董建荣) 收藏  |  浏览/下载：13/0  |  提交时间：2014/01/15 IIII-V surface passivation  atomic layer deposition  hysteresis voltage  TiAlO alloy dielectric  epi-GaAs/Ge  effective dielectric constant  elemental out-diffusion  GaAs MOS