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Giant tunnel electroresistance in ferroelectric tunnel junctions with metal contacts to two-dimensional ferroelectric materials
期刊论文
PHYSICAL REVIEW B, 2021, 卷号: 103
作者:
Kang, Lili
;
Jiang, Peng
;
Hao, Hua
;
Zhou, Yanhong
;
Zheng, Xiaohong
收藏
  |  
浏览/下载:57/0
  |  
提交时间:2021/06/15
Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories
期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2020, 卷号: 67, 期号: 12, 页码: 4660-4669
作者:
Wu, Bi
;
Wang, Chao
;
Wang, Zhaohao
;
Wang, Ying
;
Zhang, Deming
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  |  
浏览/下载:41/0
  |  
提交时间:2021/12/01
Random access memory
Magnetic tunneling
Switches
Reliability
Tunneling magnetoresistance
Metals
Transistors
SOT-MRAM
low power
high speed
high reliability
Fundamental Triangular Interaction of Electron Trajectory Deviation and P-N Junction to Promote Redox Reactions for the High-Energy-Density Electrode
期刊论文
ACS Applied Materials and Interfaces, 2020, 卷号: 12, 期号: 26, 页码: 29404-29413
作者:
Shang, Wen
;
Tan, Yongtao
;
Kong, Lingbin
;
Ran, Fen
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  |  
浏览/下载:3/0
  |  
提交时间:2020/11/14
Activated carbon
Activation energy
Capacitance
Electrodes
Energy storage
Fiber optic sensors
Gold nanoparticles
Metal nanoparticles
Metals
Molybdenum oxide
Nickel oxide
Semiconductor junctions
Active electrode materials
Capacitance retention
Electrochemical performance
Electron trajectories
High energy densities
Mass specific capacitances
Specific capacitance
Ternary nanocomposites
Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands
期刊论文
ACTA MATERIALIA, 2020, 卷号: 187, 页码: 12-18
作者:
Han, M. J.
;
Tang, Y. L.
;
Wang, Y. J.
;
Zhu, Y. L.
;
Ma, J. Y.
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  |  
浏览/下载:20/0
  |  
提交时间:2021/02/02
Resistive switching behavior
Charged domain walls
Conductive filament mode
Transmission electron microscopy
Piezoresponse force microscopy
Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands
期刊论文
ACTA MATERIALIA, 2020, 卷号: 187, 页码: 12-18
作者:
Han, M. J.
;
Tang, Y. L.
;
Wang, Y. J.
;
Zhu, Y. L.
;
Ma, J. Y.
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2021/02/02
Resistive switching behavior
Charged domain walls
Conductive filament mode
Transmission electron microscopy
Piezoresponse force microscopy
Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands
期刊论文
Acta Materialia, 2020, 卷号: 187, 页码: 12-18
作者:
Han, M.J.
;
Tang, Y.L.
;
Wang, Y.J.
;
Zhu, Y.L.
;
Ma, J.Y.
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2020/11/14
Bismuth compounds
Digital storage
Heterojunctions
High resolution transmission electron microscopy
Iron compounds
Scanning probe microscopy
Switching
Transmission electron microscopy
Tunnel junctions
Charged domain wall
Conductive filaments
Macroscopic and microscopic
Nonvolatile memory devices
Piezoresponse force microscopy
Resistance switching behaviors
Resistive switching behaviors
Technological applications
Ni-Mo ternary nitrides based one-dimensional hierarchical structures for efficient hydrogen evolution
期刊论文
CHEMICAL ENGINEERING JOURNAL, 2020, 卷号: 381
作者:
Wang, Caihong
;
Qi, Weiliang
;
Zhou, Ying
;
Kuang, Wandi
;
Azhagan, Tamil
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  |  
浏览/下载:58/0
  |  
提交时间:2020/12/16
RAY PHOTOELECTRON-SPECTROSCOPY
LIGHT-DRIVEN PHOTOCATALYST
HIGHLY EFFICIENT
NANOROD ARRAYS
CARBON NITRIDE
SELECTIVE REDUCTION
WATER
METAL
NANOPARTICLES
DEGRADATION
Computational understanding of the structural and electronic properties of the GeS-graphene contact
期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2019, 卷号: 21, 期号: 14, 页码: 7447-7453
作者:
Zhao, Jinfeng
;
Liang, Yan
;
Chen, Hong
;
Huang, Jindou
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  |  
浏览/下载:53/0
  |  
提交时间:2019/06/20
Multifunctional Nickel Film Protected n‐Type Silicon Photoanode with High Photovoltage for Efficient and Stable Oxygen Evolution Reaction
期刊论文
Small Methods, 2019, 卷号: Vol.3 No.10
作者:
Zhibin Luo
;
Bin Liu
;
Huimin Li
;
Xiaoxia Chang
;
Wenjin Zhu
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  |  
浏览/下载:9/0
  |  
提交时间:2019/11/21
interfacial passivation
metal–insulator–semiconductor junctions
oxygen evolution reaction
photoelectrochemical cells
silicon
Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits
期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 1, 页码: 159-172
作者:
Chen, Xiaoming
;
Niemier, Michael
;
Hu, Xiaobo Sharon
;
Yin, Xunzhao
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  |  
浏览/下载:70/0
  |  
提交时间:2019/04/03
Ferroelectric FET (FeFET)
logic-in-memory (LiM)
nonvolatile (NV) memory
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