Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits

doi:10.1109/TVLSI.2018.2871119

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	Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits
	Chen, Xiaoming 1; Niemier, Michael 2; Hu, Xiaobo Sharon 2; Yin, Xunzhao 2
刊名	IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
	2019
卷号	27 期号:1 页码:159-172
关键词	Ferroelectric FET (FeFET) logic-in-memory (LiM) nonvolatile (NV) memory
ISSN号	1063-8210
DOI	10.1109/TVLSI.2018.2871119
英文摘要	Among the beyond-complementary metal-oxide-semiconductor (CMOS) devices being explored, ferroelectric field-effect transistors (FeFETs) are considered as one of the most promising. FeFETs are being studied by all major semiconductor manufacturers, and experimentally, FeFETs are making rapid progress. FeFETs also stand out with the unique hysteretic Ids-Vgs characteristic that allows a device to function as both a switch and a nonvolatile (NV) storage element. We exploit this FeFET property to build two categories of fine-grained logic-in-memory (LiM) circuits: 1) ternary content addressable memory (TCAM) which integrates efficient and compact logic/processing elements into various levels of memory hierarchy; 2) basic logic function units for constructing larger and more complex LiM circuits. Two writing schemes (with and without negative supply voltages respectively) for FeFETs are introduced in our LiM designs. The resulting designs are compared with existing LiM approaches based on CMOS, magnetic tunnel junctions (MTJs), resistive random access memories (ReRAMs), ferrorelectric tunnel junctions (FTJs), etc., that afford the same circuit-level functionality. Simulation results show that FeFET-based NV TCAMs offer lower area overhead than MTJ (79%) and CMOS (42% less) equivalents, as well as better search energy-delay products (EDPs) than TCAM designs based on MTJ (149x), ReRAM (1.7x), and CMOS (1.3x) in array evaluations. NV FeFET-based LiM basic circuit blocks are also more efficient than functional equivalents based on MTJs in terms of propagation delay (4.2x) and dynamic power (2.5x). A case study for an FeFET-based LiM accumulator further demonstrates that by employing FeFET as both a switch and an NV storage element, the FeFET-based accumulator can save area (36%) and power consumption (40%) when compared with a conventional CMOS accumulator with the same structure.
资助项目	Semiconductor Research Corporation ; DARPA ; Innovative Project of Institute of Computing Technology, CAS[5120186140] ; SRC STARnet center, MARCO ; SRC STARnet center, DARPA
WOS研究方向	Computer Science ; Engineering
语种	英语
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
WOS记录号	WOS:000455117600016
内容类型	期刊论文
源URL	[http://119.78.100.204/handle/2XEOYT63/3496]
专题	中国科学院计算技术研究所期刊论文_英文
通讯作者	Yin, Xunzhao
作者单位	1.Chinese Acad Sci, Inst Comp Technol, Key Lab Comp Architecture, Beijing 100190, Peoples R China 2.Univ Notre Dame, Dept Comp Sci & Engn, Notre Dame, IN 46556 USA
推荐引用方式 GB/T 7714	Chen, Xiaoming,Niemier, Michael,Hu, Xiaobo Sharon,et al. Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits[J]. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS,2019,27(1):159-172.
APA	Chen, Xiaoming,Niemier, Michael,Hu, Xiaobo Sharon,&Yin, Xunzhao.(2019).Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits.IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS,27(1),159-172.
MLA	Chen, Xiaoming,et al."Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits".IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS 27.1(2019):159-172.