QQ客服 官方微博 反馈留言

浏览/检索结果: 共7条，第1-7条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 页码: 710-715 作者:  Shu, Lei;  Wang, Liang;  Zhou, Xin;  Li, Tong-De;  Yuan, Zhang-Yi'an 收藏  |  浏览/下载：13/0  |  提交时间：2019/12/30 400-V silicon-on-insulator (SOI) n-channel laterally diffused metal-oxide-semiconductor field-effect transistor (NLDMOSFET)  BVDS variations  laterally diffused metal-oxide-semiconductor (LDMOS)  radiation effects  SOI  technology computer-aided design (TCAD) simulations  total ionizing dose (TID)   Ruggedness Characterization of Bonding Wire Arrays in LDMOSFET-Based Power Amplifiers 期刊论文 IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2018, 卷号: 8, 页码: 1032-1041 作者:  Lin, Liang;  Hua, Yu-Jie 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/30 Bonding wire array  breakdown temperature  electro-thermo-stress (ETS)  finite-element method (FEM)  laterally diffused metal oxide semiconductor (LDMOS)  power amplifier (PA)  ruggedness testing  thermal and stress failure   ESD-Reliability Characterizations of a 45-V p-Channel LDMOS-SCR with the Discrete-Cathode End 其他 2016-01-01 Chen, Shen-Li; Huang, Yu-Ting; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung; Yen, Chih-Ying; Chen, Kuei-Jyun 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 P-type laterally-diffused metal oxide semiconductor (pLDMOS)  Electrostatic Discharge (ESD)  Holding voltage (V-h)  Secondary breakdown current (I-t2)   High temperature behavior of multi-region direct current current-voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal-oxide-semiconductor field-effect-transistors reliability 期刊论文 日本应用物理学杂志, 2014 He, Yandong; Zhang, Ganggang; Zhang, Xing 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 INTERFACE TRAPS  SMART POWER  LDMOS  PHYSICS  DCIV   High temperature behavior of multi-region direct current current-voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal-oxide-semiconductor field-effect-transistors reliability 其他 2014-01-01 He, Yandong; Zhang, Ganggang; Zhang, Xing 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal-Oxide-Semiconductor Field-Effect Transistors by a Novel Direct Current Current-Voltage Technique 期刊论文 日本应用物理学杂志, 2012 He, Yandong; Zhang, Ganggang 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13 SMART POWER   A Multi-region Trap Characterization Method and Its Reliability Application on STI-based High-Voltage LDMOSFETs 其他 2012-01-01 He, Yandong; Zhang, Ganggang; Zhang, Xing 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 High voltage LDMOS  multi-region direct current IV technique  interface state  degradation  HOT  TRANSISTORS