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浏览/检索结果: 共7条，第1-7条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A Novel Trench Gate MOS Turn-off GCT Structure 会议论文 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01 作者:  Wang, Cailin;  Wu, Yun;  Yang, Jing;  Ge, Jingtao 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/20 Gate commutated thyristor (GCT)  MOS  turn-off  trench gate   受杂散电感影响的大容量变换器中IGCT关断特性研究 期刊论文 2010, 2010 易荣; 赵争鸣; YI Rong; ZHAO Zheng-ming 收藏  |  浏览/下载：2/0 Analysis of Current Commutation Mechanism and Design Consideration of IGCT 会议论文 6th IEEE International Power Electronics and Motion Control Conference, Wuhan, PEOPLES R CHINA, 2009-01-01 作者:  Wang, Cailin;  Zhang, Ruliang;  Gao, Yong;  An, Tao 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/25 power semiconductor devices  Intrgrated Gate Commutated Thyristor (IGCT)  gate turn-off thyristor (GTO)  current commutation mechanism  gate-cathode layout   Characteristics analysis of transparent anode GTO 会议论文 4th International Power Electronics and Motion Control Conference (IPEMC 2004), Xian Jiaotong Univ, Xian, PEOPLES R CHINA, 2004-08-14 作者:  Wang, CL;  Gao, Y;  An, T;  Ma, L 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/25 power semiconductor devices  gate turn-off thyristor (GTO)  short anode gate-off thyristor (SAGTO)  transparent anode gate-off thyristor (TAGTO)  gate commuted thyristor (GCT)  injection efficiency  transparent anode  simulation   Analysis of mechanism for transparent emitter 会议论文 27th International Semiconductor Conference (CAS), Sinaia, ROMANIA, 2004-10-04 作者:  Wang, CL;  Gao, Y 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/25 power semiconductor devices  Gate Conunutated Thyristor (GCTs)  Gate Turn-Off Thyristor (GTOs)  transparent emitter  injection efficiency  simulation   Design concept for 2800V/2000A GCT 会议论文 4th International Power Electronics and Motion Control Conference (IPEMC 2004), Xian Jiaotong Univ, Xian, PEOPLES R CHINA, 2004-08-14 作者:  Wang, CL;  Gao, Y;  An, T 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/25 pmver semiconductor devices  Gate Commutated Thyristor (GCT)  Gare Turn-Off thyristor (GTO)  transparent anode  buffer layer  separation region  simulation   Influence of Device Parameter and Parasitic Inductances on Transient Behaviors of Parallel Connection of SiC GTOs 会议论文 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Xian, PEOPLES R CHINA, 2019 作者:  Liang, SW;  Li, ZQ;  Zhou, K;  Deng, LF;  Li, JT 收藏  |  浏览/下载：0/0  |  提交时间：2019/12/13 silicon carbide  gate turn-off thyristor  current sharing  turn-off