| Influence of Device Parameter and Parasitic Inductances on Transient Behaviors of Parallel Connection of SiC GTOs | |
| Liang, SW; Li, ZQ; Zhou, K; Deng, LF; Li, JT; Wang, J; IEEE | |
| 会议名称 | IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) |
| 会议日期 | 2019 |
| 会议地点 | Xian, PEOPLES R CHINA |
| 关键词 | silicon carbide gate turn-off thyristor current sharing turn-off |
| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4598595 |
| 专题 | 湖南大学 |
| 作者单位 | 1.Hunan Univ, Coll Elect & Informat Engn, Changsha 410082, Hunan, Peoples R China 2.China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Sichuan, Peoples R China 3.China Acad Engn Phys, Inst Elect Engn, Mianyang 621999, Sichuan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liang, SW,Li, ZQ,Zhou, K,et al. Influence of Device Parameter and Parasitic Inductances on Transient Behaviors of Parallel Connection of SiC GTOs[C]. 见:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). Xian, PEOPLES R CHINA. 2019. |
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