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Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2016, 卷号: 119, 期号: 7
作者:  Ma, ZY;  Wang, W;  Yang, HF;  Jiang, XF;  Yu, J
收藏  |  浏览/下载:27/0  |  提交时间:2017/03/11
Diamond based field-effect transistors with SiNX and ZrO2 double dielectric layers 期刊论文
DIAMOND AND RELATED MATERIALS, 2016, 卷号: 69
作者:  Wang, W;  Fu, K(付凯);  Hu, C;  Li, FN;  Liu, ZC
收藏  |  浏览/下载:21/0  |  提交时间:2017/03/11
Diamond based field-effect transistors with SiNX and ZrO2 double dielectric layers 会议论文
作者:  Wang, W.;  Fu, K.;  Hu, C.;  Li, F. N.;  Liu, Z. C.
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/02
Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells 期刊论文
NANOSCALE RESEARCH LETTERS, 2016, 卷号: 11
Sun, Yiling; Gao, Pingqi; He, Jian; Zhou, Suqiong; Ying, Zhiqin; Yang, Xi; Xiang, Yong; Ye, Jichun
收藏  |  浏览/下载:8/0  |  提交时间:2016/09/18
Theoretical investigation on the absorption enhancement of the crystalline silicon solar cells by pyramid texture coated with sinx:h layer 期刊论文
Solar energy, 2011, 卷号: 85, 期号: 3, 页码: 530-537
作者:  Zhao, L.;  Zuo, Y. H.;  Zhou, C. L.;  Li, H. L.;  Diao, H. W.
收藏  |  浏览/下载:21/0  |  提交时间:2019/05/12
The impact of nanoporous SiN (x) interlayer growth position on high-quality GaN epitaxial films 期刊论文
CHINESE SCIENCE BULLETIN, 2011, 卷号: 56, 期号: 25, 页码: 2739
Ma, ZG; Xing, ZG; Wang, XL; Chen, Y; Xu, PQ; Cui, YX; Wang, L; Jiang, Y; Jia, HQ; Chen, H
收藏  |  浏览/下载:23/0  |  提交时间:2013/09/23
Theoretical investigation on the absorption enhancement of the crystalline silicon solar cells by pyramid texture coated with SiNx:H layer 期刊论文
solar energy, 2011, 卷号: 85, 期号: 3, 页码: 530-537
Zhao L; Zuo YH; Zhou CL; Li HL; Diao HW; Wang WJ
收藏  |  浏览/下载:57/9  |  提交时间:2011/07/05
太阳电池用晶体硅钝化研究 学位论文
硕士: 中国科学院电工研究所, 2008
1唐煜,电工研究所
收藏  |  浏览/下载:11/0  |  提交时间:2010/10/18
ZnO thin film grown on glass by metal-organic chemical vapor deposition (EI CONFERENCE) 会议论文
2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, March 24, 2008 - March 27, 2008, Shanghai, China
Ma X. M.; Yang X. T.; Wang C.; Yang J.; Gao X. H.; Liu J. E.; Jing H.; Du G. T.; Liu B. Y.; Ma K.
收藏  |  浏览/下载:44/0  |  提交时间:2013/03/25
Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of gan by mocvd 期刊论文
Journal of physics d-applied physics, 2002, 卷号: 35, 期号: 21, 页码: 2731-2734
作者:  Feng, G;  Fu, Y;  Xia, JS;  Zhu, JJ;  Zhang, BS
收藏  |  浏览/下载:13/0  |  提交时间:2019/05/12


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