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半导体研究所 [18]
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Investigation of electronic structures and optical properties of β -Si3N4 doped with IV A elements: A first-principles simulation
期刊论文
AIP Advances, 2018, 卷号: 8, 期号: 4
作者:
Lu, Xuefeng
;
Gao, Xu
;
Ren, Junqiang
;
Li, Cuixia
;
Guo, Xin
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2020/11/14
Electronic structure
Energy gap
Germanium compounds
Microelectronics
Silicon nitride
Charge difference
First-principles simulations
Formation energies
Generalized gradient approximations
Indirect band gap
Micro-electronic devices
Mulliken populations
Perdew-burke-ernzerhof
Investigation of electronic structures and optical properties of β -Si3N4 doped with IV A elements: A first-principles simulation
期刊论文
AIP Advances, 2018, 卷号: 8, 期号: 4
作者:
Lu, Xuefeng
;
Gao, Xu
;
Ren, Junqiang
;
Li, Cuixia
;
Guo, Xin
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2022/02/17
Electronic structure
Energy gap
Germanium compounds
Microelectronics
Semiconducting germanium
Silicon nitride
Charge difference
First-principles simulations
Formation energies
Generalized gradient approximations
Indirect band gap
Micro-electronic devices
Mulliken populations
Perdew-burke-ernzerhof
Dirac Signature in Germanene on Semiconducting Substrate
期刊论文
ADVANCED SCIENCE, 2018, 卷号: 5, 期号: 7, 页码: 1800207
作者:
Zhuang, JC
;
Liu C(刘晨)
;
Liu, C
;
Zhou, ZY
;
Casillas, G
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2019/09/24
2D materials
Dirac fermions
field-effect transistors
germanene
scanning tunneling microscopy
transmission electron microscopy
Synthesis and structures of type-I clathrates: Rb6Na2Ge44.89(1), Cs6Na2Zn4Ge42 and Cs6.40(1)Na1.60(1)Ga8Ge38
期刊论文
JOURNAL OF SOLID STATE CHEMISTRY, 2016, 卷号: 242, 页码: 155-161
作者:
Zhang, Hui
;
Mu, Gang
;
Huang, Fuqiang
;
Xie, Xiaoming
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2017/02/27
Clathrates
Structures
Theoretical calculations
GaAs-on-insulator fabricated via ion-cut in epitaxial GaAs /Ge substrate
会议论文
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, October 28, 2014 - October 31, 2014
作者:
Chang, Yongwei
;
Chen, Da
;
Di, Zengfeng
;
Zhang, Miao
;
Yu, Wenjie
收藏
  |  
浏览/下载:0/0
  |  
提交时间:2017/01/20
Semiconducting gallium
Bonding
Chemical bonds
Etching
Gallium arsenide
Germanium
Molecular beam epitaxy
Silicon oxides
Silicon wafers
Wafer bonding
Annealing temperatures
Bulk substrates
Chemical etching
Dose implantation
Epitaxial GaAs
High-crystalline quality
Room temperature bonding
Sacrificial layer
Ultrathin low temperature Si0.75Ge0.25/Si buffer layer for the growth of high quality Ge epilayer on Si (100) by RPCVD
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 386, 页码: 38-42
作者:
Chen, D
;
Wei, X
;
Xue, ZY
;
Bian, JT
;
Wang, G
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/05/25
Point defect
Single crystal growth
Chemical vapor deposition processes
Semiconducting germanium
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
He, Jifang
;
Shang, Xiangjun
;
Li, Mifeng
;
Zhu, Yan
;
Chang, Xiuying
;
Ni, Haiqiao
;
Xu, Yingqiang
;
Niu, Zhichuan
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Buffer layers
Epitaxial growth
Gallium alloys
Gallium arsenide
Germanium
Growth temperature
High resolution transmission electron microscopy
Molecular beam epitaxy
Molecular beams
Semiconducting gallium
Semiconductor device structures
Semiconductor quantum wells
Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As
期刊论文
ieee international conference on group iv photonics gfp, 2011, 页码: 314-316
Hu, Weixuan
;
Cheng, Buwen
;
Xue, Chunlai
;
Su, Shaojian
;
Liu, Zhi
;
Li, Yaming
;
Wang, Qiming
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2012/06/13
Epitaxial growth
Germanium
Indium
Photonics
Semiconducting silicon compounds
Silicon
Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique
期刊论文
guangdianzi jiguang/journal of optoelectronics laser, 2011, 卷号: 22, 期号: 7, 页码: 1030-1033
Zhou, Zhi-Wen
;
He, Jing-Kai
;
Li, Cheng
;
Yu, Jin-Zhong
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2012/06/13
Atomic force microscopy
Atomic spectroscopy
Chemical vapor deposition
Diffraction
Epitaxial growth
Germanium
Raman spectroscopy
Semiconducting silicon compounds
Substrates
Surface morphology
Ultrahigh vacuum
X ray diffraction
Photon detection and emission of epitaxial Ge on Si with potential applications in microwave photonic filters
期刊论文
2011 ieee international topical meeting on microwave photonics- jointly held with the2011 asia-pacific microwave photonics conference, mwp/apmp2011, 2011, 页码: 101-104
Ding, L.
;
Lim, Andy Eu-Jin
;
Fang, Qing
;
Liow, Tsung-Yang
;
Yu, M.B.
;
Lo, G.-Q.
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2012/06/14
Detectors
Electroluminescence
Epitaxial growth
Germanium
Light
Light emission
Light sources
Microwave filters
Microwaves
Monolithic integrated circuits
Optical frequency conversion
Photodetectors
Photoluminescence
Photonics
Photons
Semiconducting silicon compounds
Silicon
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