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Influence of neutron irradiation on X-ray diffraction, Raman spectrum and photoluminescence from pyrolytic and hot-pressed hexagonal boron nitride
期刊论文
JOURNAL OF LUMINESCENCE, 2023, 卷号: 263
作者:
Zhou, Shun
;
Xu, Wen
;
Xiao, Yiming
;
Xiao, Huan
;
Zhang, Jing
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2023/11/10
Hexagonal boron nitride
Neutron irradiation
X-ray diffRaction
Raman spectrum
Photoluminescence
Structural and electronic properties of Ta
2
O
5
with one formula unit
期刊论文
COMPUTATIONAL MATERIALS SCIENCE, 2023, 卷号: 230
作者:
Tong, Yangwu
;
Tang, Huimin
;
Yang, Yong
收藏
  |  
浏览/下载:120/0
  |  
提交时间:2023/11/17
Ta2O5
Structure Search
Elementary Building Block
DFT Calculations
Defect Emission and Its Dipole Orientation in Layered Ternary Znln
2
S
4
Semiconductor
期刊论文
SMALL, 2023
作者:
Wang, Rui
;
Liu, Quan
;
Dai, Sheng
;
Liu, Chao-Ming
;
Liu, Yue
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2023/11/17
back focal plane imaging
defect
dipole orientation
photoluminescence
Znln(2)S(4)
Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs
期刊论文
MICROELECTRONICS RELIABILITY, 2023, 卷号: 149
作者:
Yu, Cheng-hao
;
Guo, Hao-min
;
Liu, Yan
;
Wu, Xiao-dong
;
Zhang, Li-long
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2023/11/10
Depletion-mode
Single-event burnout (SEB)
Single-event gate rupture
Theoretical Exploration of Properties of Iron-Silicon Interface Constructed by Depositing Fe on Si(111)-(7x7)
期刊论文
MOLECULES, 2023, 卷号: 28, 期号: 20, 页码: 13
作者:
Yin, Jun-Qing
;
Zhang, Yan-Ping
;
You, Yong
;
Wang, Zhen-Hua
;
Zhao, Jian-Qiang
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2023/11/28
iron
Si(111)-(7x7)
iron-silicon interface
CO adsorption
density functional theory
Theoretical insight into the influence of different molecular design strategies on photovoltaic properties for a series of POM-based dyes applied in dye-sensitized solar cells
期刊论文
New Journal of Chemistry, 2023, 期号: 47, 页码: 9501
作者:
Yu Gao
;
Zhi-Bin Lu
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  |  
浏览/下载:1/0
  |  
提交时间:2024/01/02
Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth
期刊论文
NANOMATERIALS, 8, 2023, 卷号: 13, 页码: 1382
作者:
Peng Q(彭庆)
;
Ma ZW(马知未)
;
Cai, Shixian
;
Zhao S(赵帅)
;
Chen, Xiaojia
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2023/06/15
AlGaN thin film
molecular dynamics simulations
laser annealing
atomistic structure
A SiC asymmetric cell trench MOSFET with a split gate and integrated p(+)-poly Si/SiC heterojunction freewheeling diode
期刊论文
CHINESE PHYSICS B, 2023, 卷号: 32, 期号: 5, 页码: 8
作者:
Jiang, Kaizhe
;
Zhang, Xiaodong
;
Tian, Chuan
;
Zhang, Shengrong
;
Zheng, Liqiang
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2023/10/07
split gate (SG)
heterojunction freewheeling diode (HJD)
SiC asymmetric cell trench MOSFET
turn-on loss
turn-off loss
48 W Continuous-Wave Output From a High-Efficiency Single Emitter Laser Diode at 915 nm
期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2022, 卷号: 34, 期号: 22, 页码: 1218-1221
作者:
Liu, Yuxian
;
Yang, Guowen
;
Zhao, Yongming
;
Tang, Song
;
Lan, Yu
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2022/10/25
Semiconductor laser
laser diode
high power
high efficiency
915 nm
The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain
期刊论文
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2022, 卷号: 284
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Guo, Xin
;
Ren, Junqiang
;
Xue, Hongtao
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2022/08/09
Binding energy
Calculations
Gallium compounds
Graphene
Ground state
Heterojunctions
III-V semiconductors
Ohmic contacts
Schottky barrier diodes
Strain
Thermoelectric equipment
Van der Waals forces
Electronic characteristics
Graphene/GaP
In-plane strains
Interlayer coupling
Layer-spacing
Micro/nano
Nanoelectronic devices
P-type
Schottky barriers
Schottky contacts
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