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CORC

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Nuclear microbeam analysis of ICF target material made by GDP technique 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2015, 卷号: 348, 页码: 178-182
作者:  Rong, C.;  He, X.;  Meng, J.;  Gao, D.;  Zhang, Y.
收藏  |  浏览/下载：15/0  |  提交时间：2018/07/05
Nuclear microbeam analysis of ICF target material made by GDP technique 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2015, 卷号: 348, 页码: 178—182
作者:  Rong, C;  He, X;  Meng, J;  Gao, D;  Zhang, Y
收藏  |  浏览/下载：18/0  |  提交时间：2015/12/09
PIXE  MICROPROBE  SPECTRA  RBS  
Thermal Annealing Behavior of Helium in Ti Films Deposited by Magnetron Sputtering 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29
作者:  Zhang Lei;  He Zhi-Jiang;  Liu Chao-Zhuo;  Wang Xu-Fei;  Shi Li-Qun
收藏  |  浏览/下载：9/0  |  提交时间：2018/07/05
Effect of nitrogen addition on hydrogen incorporation in diamond nanorod thin films 期刊论文
CURRENT APPLIED PHYSICS, 2012, 卷号: 12, 期号: 3
Sobia, AR; Adnan, S; Mukhtiar, A; Khurram, AA; Turab, AA; Awais, A; Naveed, A; Faisal, QJ; Javaid, H; Yu, GJ（俞国军）
收藏  |  浏览/下载：6/0  |  提交时间：2013/12/05
The Mean Projected Range and Range Straggling of Er Ions Implanted in 6h Silicon Carbide 期刊论文
ADVANCED MATERIALS RESEARCH II, PTS 1 AND 2, 2012, 卷号: 463-464, 页码: 798-801
作者:  Qin, Xi-Feng;  Wang, Hui-Ning;  Ji, Zi-Wu;  Wang, Feng-Xiang;  Fu, Gang
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/23
The mean projected range and range straggling of Yb ions implanted in silicon crystal 期刊论文
NEW MATERIALS AND PROCESSES, PTS 1-3, 2012, 卷号: 476-478, 页码: 1249-1253
作者:  Qin, Xi-Feng;  Wang, Hui-Ning;  Ji, Zi-Wu;  Wang, Feng-Xiang;  Fu, Gang
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/23
Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 6
作者:  Qin Xi-Feng;  Li Hong-Zhen;  Li Shuang;  Ji Zi-Wu;  Wang Hui-Ning
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/23
Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surface 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 卷号: 278, 页码: 1-3
作者:  Qin, Xi-Feng;  Ji, Zi-Wu;  Chen, Ming;  Liu, Xiu-Hong;  Wang, Xue-Lin
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/23
Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature 期刊论文
Chinese Physics B, 2012, 期号: 06, 页码: 389-392
作者:  Qin XF(秦希峰);  Li HZ(李洪珍);  Li S(李双);  Ji ZW(冀子武);  Wang HN(王绘凝)
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/23
Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiO _x on or into a silicon surface 期刊论文
Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms, 2012, 页码: 1-3
作者:  Qin, X.-F.;  Ji, Z.-W.;  Chen, M.;  Liu, X.-H.;  Wang, X.-L.
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/23

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