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CORC

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Beyond Orowan hardening: Mapping the four distinct mechanisms associated with dislocation-precipitate interaction 期刊论文
INTERNATIONAL JOURNAL OF PLASTICITY, 2023, 卷号: 169, 页码: 103710
作者:  Peng, Shenyou;  Wang, Zhili;  Li, Jia;  Fang, Qihong;  Wei YJ(魏宇杰)
收藏  |  浏览/下载：11/0  |  提交时间：2023/09/26
Irradiation hardening behaviors of tungsten-potassium alloy studied by accelerated 3-MeVW2+ ions* 期刊论文
CHINESE PHYSICS B, 2020, 卷号: 29
作者:  Yang, Xiao-Liang;  Chen, Long-Qing;  Qiu, Wen-Bin;  Song, Yang-Yi-Peng;  Tang, Yi
收藏  |  浏览/下载：17/0  |  提交时间：2020/11/26
Particle Acceleration and Synchrotron Self-Compton Emission in Blazar Jets. I. An Application to Quiescent Emission 期刊论文
ASTROPHYSICAL JOURNAL, 2019, 卷号: 873, 期号: 1, 页码: 13
作者:  Zheng YG(郑永刚);  Kang, S. J.;  Yang CY(杨初源);  Bai JM(白金明)
收藏  |  浏览/下载：52/0  |  提交时间：2019/03/18
Detailed Analysis Of The Baseline Dose Levels And Localized Radiation Spikes In The Arc Sections Of The Large Hadron Collider During Run 2 会议论文
Australia, 2019
作者:  K. Bilko;  M. Brugger;  R. Garcia Alia;   F.J. Harden;  Y. Kadi
收藏  |  浏览/下载：25/0  |  提交时间：2019/08/06
Characteristics of Single Event Upsets induced by Heavy Ions in 28nm UTBB-FDSOI SRAM with Several Types of Radiation Harden Bit-cells 会议论文
作者:  Bo Mei;  Qingkui Yu;  Yong Ge;  Yi Sun;  Hongwei Zhang
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/10
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 会议论文
Geneva, SWITZERLAND, OCT 02-06, 2017
作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie
收藏  |  浏览/下载：38/0  |  提交时间：2018/10/08
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ]
收藏  |  浏览/下载：53/0  |  提交时间：2018/09/27
A radiation harden enhanced Quatro (RHEQ) SRAM cell 期刊论文
IEICE ELECTRONICS EXPRESS, 2017, 卷号: Vol.14 No.18
作者:  Liu,Changyong;  Zhang,Jingbo;  Chen,Ziyang;  Peng,Chunyu;  Lin,Zhiting
收藏  |  浏览/下载：6/0  |  提交时间：2019/04/22
Comparison of single-event transients of t-gate core and io device in 130nm partially depleted silicon-on-insulator technology 期刊论文
Ieice electronics express, 2016, 卷号: 13, 期号: 12, 页码: 11
作者:  Zheng Yunlong;  Dai Ruofan;  Chen Zhuojun;  Sun Shulong;  Wang Zheng
收藏  |  浏览/下载：38/0  |  提交时间：2019/05/09
Design and Simulation of SET and Radiation-Harden on DPLL 会议论文
作者:  Yang, Weitao;  He, Chaohui;  Du, Xuecheng;  Fan, Yunyun;  Yuan, Yuan
收藏  |  浏览/下载：4/0  |  提交时间：2019/11/26

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