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CORC

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Realization of a non-markov chain in a single 2D mineral RRAM 期刊论文
SCIENCE BULLETIN, 2021, 卷号: 66, 期号: 16, 页码: 1634-1640
作者:  Zhang, Rongjie;  Chen, Wenjun;  Teng, Changjiu;  Liao, Wugang;  Liu, Bilu
收藏  |  浏览/下载：12/0  |  提交时间：2021/11/22
Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2021, 卷号: 13, 期号: 26, 页码: 31001-31009
作者:  Liu, Nan;  Cao, Yi;  Zhu, Yin-Lian;  Wang, Yu-Jia;  Tang, Yun-Long
收藏  |  浏览/下载：47/0  |  提交时间：2021/10/15
Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2021, 卷号: 13, 期号: 26, 页码: 31001-31009
作者:  Liu, Nan;  Cao, Yi;  Zhu, Yin-Lian;  Wang, Yu-Jia;  Tang, Yun-Long
收藏  |  浏览/下载：22/0  |  提交时间：2021/10/14
Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2021, 卷号: 7, 期号: 5, 页码: -
作者:  Shih, Yu-Chuan;  Lee, Ling;  Liang, Kai-De;  Manikandan, Arumugam;  Liu, Wen-Wu
收藏  |  浏览/下载：5/0  |  提交时间：2021/03/12
High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient 期刊论文
NANOSCALE, 2021, 卷号: 13, 期号: 4, 页码: 2448-2455
作者:  Aziz, Tariq;  Wei, Shijing;  Sun, Yun;  Ma, Lai-Peng;  Pei, Songfeng
收藏  |  浏览/下载：19/0  |  提交时间：2021/03/15
The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures 期刊论文
IEEE DESIGN & TEST, 2020, 卷号: 37, 期号: 1, 页码: 79-99
作者:  Chen, Xiaoming;  Sun, Xiaoyu;  Wang, Panni;  Datta, Suman;  Hu, Xiaobo Sharon
收藏  |  浏览/下载：15/0  |  提交时间：2020/12/10
A comprehensive investigation of MoO3 based resistive random access memory 期刊论文
RSC ADVANCES, 2020, 卷号: 10, 期号: 33, 页码: 19337-19345
作者:  Fatheema, Jameela;  Shahid, Tauseef;  Mohammad, Mohammad Ali;  Islam, Amjad;  Malik, Fouzia
收藏  |  浏览/下载：19/0  |  提交时间：2020/12/16
Asymmetric-Structure-Induced Self-Rectifying in Nanoscale HfO2-Based RRAM Array 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 8, 页码: 3337-3341
作者:  Zhang, Xinlei;  Ji, Hao;  Jiang, Ran
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/11
Impact of chemical doping on resistive switching behavior in Zirconium-doped CHNHPbI based RRAM 期刊论文
Organic Electronics, 2019
作者:  Yuli He;  Guokun Ma;  Xiaowen Zhou;  Hengmei Cai;  Chunlei Liu
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/17
A ZnO-based resistive device for RRAM application 会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:  Xie, Hongwei;  Liu, Yantao;  Qi, Yue
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/20

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