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Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure
期刊论文
THIN SOLID FILMS, 2022, 卷号: 762
作者:
Cheng, Wangping
;
Li, Chenhui
;
Zhou, Chen
;
He, Yuandi
;
Wei, Renhuai
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2022/12/23
Resistive random access memory
Resistive switching
Self-rectifying behavior
Copper chromium oxide
Thin film
Solution deposition
Block Convolution: Toward Memory-Efficient Inference of Large-Scale CNNs on FPGA
期刊论文
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2022, 卷号: 41, 期号: 5, 页码: 1436-1447
作者:
Li, Gang
;
Liu, Zejian
;
Li, Fanrong
;
Cheng, Jian
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2022/06/10
Convolution
Field programmable gate arrays
System-on-chip
Task analysis
Random access memory
Tensors
Memory management
Block convolution
convolutional neural network (CNN) accelerator
field-programmable gate array (FPGA)
memory efficient
off-chip transfer
Impact of High TID Irradiation on Stability of 65 nm SRAM Cells
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 卷号: 69, 期号: 5, 页码: 1044-1050
作者:
Cui, JW (Cui, Jiangwei) [1]
;
Zheng, QW (Zheng, Qiwen) [1]
;
Li, YD (Li, Yudong) [1]
;
Guo, Q (Guo, Qi) [1]
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  |  
浏览/下载:17/0
  |  
提交时间:2022/06/21
SRAM cells
Radiation effects
Arrays
Stability criteria
Circuit stability
Voltage measurement
Logic gates
Stability
static random-access memory (SRAM) cell
total ionizing dose (TID)
Verification of SEU resistance in 65 nm high-performance SRAM with dual DICE interleaving and EDAC mitigation strategies
期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2021, 卷号: 32, 期号: 12, 页码: 13
作者:
He, Ze
;
Zhao, Shi-Wei
;
Liu, Tian-Qi
;
Cai, Chang
;
Yan, Xiao-Yu
收藏
  |  
浏览/下载:64/0
  |  
提交时间:2022/01/12
Double interlocked storage cell (DICE)
Error detection and correction (EDAC) code
Heavy ion
Radiation hardening technology
Single event upset (SEU)
Static random-access memory (SRAM)
Design and verification of multiple SEU mitigated circuits on SRAM-based FPGA system
期刊论文
MICROELECTRONICS RELIABILITY, 2021, 卷号: 126, 页码: 7
作者:
Yu, Jian
;
Cai, Chang
;
Ning, Bingxu
;
Gao, Shuai
;
Liu, Tianqi
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2022/01/24
Heavy ions
Irradiation
Hardened
Single event upset
Realization of a non-markov chain in a single 2D mineral RRAM
期刊论文
SCIENCE BULLETIN, 2021, 卷号: 66, 期号: 16, 页码: 1634-1640
作者:
Zhang, Rongjie
;
Chen, Wenjun
;
Teng, Changjiu
;
Liao, Wugang
;
Liu, Bilu
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2021/11/22
2D materials
Mica
Ion transport
RRAM
Non-Markov chain
Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2021, 卷号: 13, 期号: 26, 页码: 31001-31009
作者:
Liu, Nan
;
Cao, Yi
;
Zhu, Yin-Lian
;
Wang, Yu-Jia
;
Tang, Yun-Long
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2021/10/15
resistive switching
spinodal decomposition
perovskites
atomic force microscopy
transmission electron microscopy
Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2021, 卷号: 13, 期号: 26, 页码: 31001-31009
作者:
Liu, Nan
;
Cao, Yi
;
Zhu, Yin-Lian
;
Wang, Yu-Jia
;
Tang, Yun-Long
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2021/10/14
resistive switching
spinodal decomposition
perovskites
atomic force microscopy
transmission electron microscopy
Enhancing the security of memory in cloud infrastructure through in-phase change memory data randomisation
期刊论文
IET COMPUTERS AND DIGITAL TECHNIQUES, 2021, 页码: 14
作者:
Zhou, Xianzhong
;
Wang, Ying
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2021/12/01
Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2021, 卷号: 7, 期号: 5, 页码: -
作者:
Shih, Yu-Chuan
;
Lee, Ling
;
Liang, Kai-De
;
Manikandan, Arumugam
;
Liu, Wen-Wu
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2021/03/12
Copper
Copper oxides
Nanocrystalline materials
Nanowires
Oxide minerals
RRAM
Single crystals
Fabrication process
High current densities
Random access memory
Resistive switching
Resistive switching memory
Switching behaviors
Switching mechanism
Switching properties
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