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| SRAM型FPGA的SEU容错技术研究 学位论文 中国科学院光电技术研究所: University of Chinese Academy of Sciences, 2021 作者: 钟敏 收藏  |  浏览/下载:60/0  |  提交时间:2021/06/28
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| Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM* 期刊论文 CHINESE PHYSICS B, 2021, 卷号: 30, 期号: 3, 页码: 8 作者: Mo, Li-Hua; Ye, Bing; Liu, Jie; Luo, Jie; Sun, You-Mei 收藏  |  浏览/下载:33/0  |  提交时间:2021/12/10
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| SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell 期刊论文 MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 页码: 6 作者: Cai, C.; Zhao, P. X.; Xu, L. W.; Liu, T. Q.; Li, D. Q. 收藏  |  浏览/下载:16/0  |  提交时间:2022/01/19
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| Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout 期刊论文 NUCLEAR SCIENCE AND TECHNIQUES, 2015, 卷号: 26, 页码: 7 作者: Duan Jing-Lai; En Yun-Fei; Xi Kai; Mo Dan; Luo Jie 收藏  |  浏览/下载:14/0  |  提交时间:2018/05/31
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| Simulation of the characteristics of low-energy proton induced single event upset 期刊论文 SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2014, 卷号: 57, 页码: 1902-1906 作者: Geng Chao; Xi Kai; Liu TianQi; Liu Jie 收藏  |  浏览/下载:14/0  |  提交时间:2018/07/05
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| Effectiveness and failure modes of error correcting code in industrial 65 um CMOS SRAMs exposed to heavy ions 期刊论文 NUCLEAR SCIENCE AND TECHNIQUES, 2014, 卷号: 25 作者: Tong Teng; Wang Xiao-Hui; Zhang Zhan-Gang; Ding Peng-Cheng; Liu Jie 收藏  |  浏览/下载:10/0  |  提交时间:2018/07/05
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| 90 nm互补金属氧化物半导体静态随机存储器局部单粒子闩锁传播效应诱发多位翻转的机理 期刊论文 物理学报, 2014, 卷号: 63, 期号: 12, 页码: 128501 作者: 陈睿; 余永涛; 上官士鹏; 封国强; 韩建伟 收藏  |  浏览/下载:23/0  |  提交时间:2015/09/22
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| Modeling and assessing the influence of linear energy transfer on multiple bit upset susceptibility 期刊论文 CHINESE PHYSICS B, 2013, 卷号: 22 作者: Gu Song; Xi Kai; Liu Jie; Geng Chao; Liu Tian-Qi 收藏  |  浏览/下载:14/0  |  提交时间:2018/07/05
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| Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation 期刊论文 CHINESE PHYSICS B, 2013, 卷号: 22 作者: Liu Jie; Yao Hui-Jun; Mo Dan; Duan Jing-Lai; Su Hong 收藏  |  浏览/下载:12/0  |  提交时间:2018/07/05
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| Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence 期刊论文 CHINESE PHYSICS B, 2013, 卷号: 22 作者: Geng Chao; Mo Dan; Yao Hui-Jun; Duan Jing-Lai; Sun You-Mei 收藏  |  浏览/下载:15/0  |  提交时间:2018/07/05
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