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CORC

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Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2021, 卷号: 14, 期号: 1, 页码: 2185–2193
作者:  Ma, Xiaolei;   Liu, Yue-Yang;   Zeng, Lang;   Chen, Jiezhi;   Wang, Runsheng;   Wang, Lin-Wang;   Wu, Yanqing;   Jiang, Xiangwei
收藏  |  浏览/下载：28/0  |  提交时间：2022/03/23
Thiolated poly(aspartic acid)-functionalized two-dimensional MoS2, chitosan and bismuth film as a sensor platform for cadmium ion detection 期刊论文
RSC ADVANCES, 2020, 卷号: 10, 期号: 62, 页码: 37989-37994
作者:  Cao, Qiang;  Xiao, Yushi;  Huang, Rong;  Liu, Na;  Chi, Hai
收藏  |  浏览/下载：115/0  |  提交时间：2020/12/16
First-principles investigations on MXene-blue phosphorene and MXene-MoS(2)transistors 期刊论文
NANOTECHNOLOGY, 2020, 卷号: 31, 期号: 39
作者:  Zhou, Yuhong;  Zhuge, Xia;  An, Peng;  Du, Shiyu
收藏  |  浏览/下载：10/0  |  提交时间：2020/12/16
Interfaces between MoOx and MoX2 (X = S, Se, and Te) 期刊论文
CHINESE PHYSICS B, 2020, 卷号: 29, 期号: 11, 页码: -
作者:  Chen, FM;  Liu, JX;  Zheng, XM;  Liu, LH;  Xie, HP
收藏  |  浏览/下载：33/0  |  提交时间：2021/09/06
Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties 期刊论文
SMALL, 2019, 页码: 9
作者:  Cai, Zhengyang;  Shen, Tianze;  Zhu, Qi;  Feng, Simin;  Yu, Qiangmin
收藏  |  浏览/下载：20/0  |  提交时间：2021/02/02
Pressure effect on the electronic, structural, and vibrational properties of layered 2H-MoTe2 期刊论文
PHYSICAL REVIEW B, 2019, 卷号: 99, 期号: 2, 页码: 6
作者:  Zhao, Xiao-Miao;  Liu, Han-yu;  Goncharov, Alexander F.;  Zhao, Zhi-Wei;  Struzhkin, Viktor V.
收藏  |  浏览/下载：2/0  |  提交时间：2020/03/31
A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices 期刊论文
ACS Nano, 2019, 卷号: 13, 期号: 5, 页码: 5513-5522
作者:  Liu LQ(刘连庆);  Zhang, Dingdong;  Du, Jinhong;  Hong, Yi-Lun;  Zhang, Weimin
收藏  |  浏览/下载：91/0  |  提交时间：2019/06/18
Short channel monolayer MoS2 field-effect transistors defined by SiO x nanofins down to 20 nm 期刊论文
Nanotechnology, 2019, 卷号: Vol.30 No.29
作者:  Bi, Kaixi;  Liu, Huaizhi;  Chen, Yiqin;  Luo, Fang;  Shu, Zhiwen
收藏  |  浏览/下载：12/0  |  提交时间：2019/12/13
Chemical modification, field effect transistors and voltage-driven spin logic gates of tailored monolayer MoS2 nanoflakes 期刊论文
Applied Surface Science, 2019, 卷号: 481, 页码: 910-918
作者:  Zhang, Lishu;  Dai, Xinyue;  Li, Tao;  Li, Hui
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Short channel monolayer MoS2 field-effect transistors defined by SiO x nanofins down to 20 nm. 期刊论文
Nanotechnology, 2019, 卷号: Vol.30 No.29, 页码: 295301
作者:  
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17

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