Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties

doi:10.1002/smll.201903181

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	Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties
	Cai, Zhengyang 1; Shen, Tianze 2; Zhu, Qi 3,4; Feng, Simin 1; Yu, Qiangmin 1; Liu, Jiaman 1; Tang, Lei 1; Zhao, Yue 2; Wang, Jiangwei 3,4; Liu, Bilu 1
刊名	SMALL
	2019-10-02
页码	9
关键词	doping dual-additive chemical vapor deposition electronic properties field effect transistors hydrogen evolution reaction MoS2
ISSN号	1613-6810
DOI	10.1002/smll.201903181
通讯作者	Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(cheng@imr.ac.cn)
英文摘要	Doping of bulk silicon and III-V materials has paved the foundation of the current semiconductor industry. Controlled doping of 2D semiconductors, which can also be used to tune their bandgap and type of carrier thus changing their electronic, optical, and catalytic properties, remains challenging. Here the substitutional doping of nonlike element dopant (Mn) at the Mo sites of 2D MoS2 is reported to tune its electronic and catalytic properties. The key for the successful incorporation of Mn into the MoS2 lattice stems from the development of a new growth technology called dual-additive chemical vapor deposition. First, the addition of a MnO2 additive to the MoS2 growth process reshapes the morphology and increases lateral size of Mn-doped MoS2. Second, a NaCl additive helps in promoting the substitutional doping and increases the concentration of Mn dopant to 1.7 at%. Because Mn has more valance electrons than Mo, its doping into MoS2 shifts the Fermi level toward the conduction band, resulting in improved electrical contact in field effect transistors. Mn doping also increases the hydrogen evolution activity of MoS2 electrocatalysts. This work provides a growth method for doping nonlike elements into 2D MoS2 and potentially many other 2D materials to modify their properties.
资助项目	National Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[51521091] ; National Natural Science Foundation of China[51920105002] ; Youth 1000-Talent Program of China ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Guangdong Innovative and Entrepreneurial Research Team Program[2016ZT06D348] ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project[201901171523] ; Shenzhen Basic Research Project[JCYJ20170307140956657] ; Development and Reform Commission of Shenzhen Municipality for the development of the Low-Dimensional Materials and Devices discipline
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	WILEY-V C H VERLAG GMBH
WOS记录号	WOS:000488405900001
资助机构	National Natural Science Foundation of China ; Youth 1000-Talent Program of China ; Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project ; Shenzhen Basic Research Project ; Development and Reform Commission of Shenzhen Municipality for the development of the Low-Dimensional Materials and Devices discipline
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/135792]
专题	金属研究所_中国科学院金属研究所
通讯作者	Liu, Bilu; Cheng, Hui-Ming
作者单位	1.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen Geim Graphene Ctr, Shenzhen 518055, Guangdong, Peoples R China 2.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China 3.Zhejiang Univ, Sch Mat Sci & Engn, Ctr Electron Microscopy, Hangzhou 310027, Zhejiang, Peoples R China 4.Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China 5.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
推荐引用方式 GB/T 7714	Cai, Zhengyang,Shen, Tianze,Zhu, Qi,et al. Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties[J]. SMALL,2019:9.
APA	Cai, Zhengyang.,Shen, Tianze.,Zhu, Qi.,Feng, Simin.,Yu, Qiangmin.,...&Cheng, Hui-Ming.(2019).Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties.SMALL,9.
MLA	Cai, Zhengyang,et al."Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties".SMALL (2019):9.