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CORC

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Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2019, 卷号: 7, 期号: 19, 页码: 5677
作者:  Li, Guanjie;  Li, Xiaomin;  Zhao, Junliang;  Zhu, Qiuxiang;  Chen, Yongbo
收藏  |  浏览/下载：42/0  |  提交时间：2019/12/26
AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation 期刊论文
APPLIED PHYSICS LETTERS, 2016, 卷号: 108, 期号: 1
作者:  Sun, SC;  Fu, K(付凯);  Yu, GH(于国浩);  Zhang, ZL;  Song, L
收藏  |  浏览/下载：35/0  |  提交时间：2017/03/11
Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 6
作者:  Lu Yuan-Jie;  Feng Zhi-Hong;  Cai Shu-Jun;  Dun Shao-Bo;  Liu Bo
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/23
Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
Chinese Physics B, 2013, 期号: 06, 页码: 522-525
作者:  Lv YJ(吕元杰);  Feng ZH(冯志红);  Cai SJ(蔡树军);  Dun SB(敦少博);  Liu B(刘波)
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/23
Influence of drain bias on the electron mobility in AIGaN/AIN/GaN heterostructure field-effect transistors 期刊论文
中国物理B：英文版, 2013, 期号: 06, 页码: 518-521
作者:  吕元杰[1,2];  冯志红[1];  蔡树军[1];  敦少博[1];  刘波[1]
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/23
Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2012, 卷号: 41, 期号: 3, 页码: 471
Chen, Y; Jiang, Y; Xu, PQ; Ma, ZG; Wang, XL; He, T; Peng, MZ; Luo, WJ; Liu, XY; Wang, L; Jia, HQ; Chen, H
收藏  |  浏览/下载：26/0  |  提交时间：2013/09/17
Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures 期刊论文
applied physics letters, 2012, 卷号: 100, 期号: 8, 页码: 082101
Liu, Guipeng; Wu, Ju; Zhao, Guijuan; Liu, Shuman; Mao, Wei; Hao, Yue; Liu, Changbo; Yang, Shaoyan; Liu, Xianglin; Zhu, Qinsheng; Wang, Zhanguo
收藏  |  浏览/下载：19/0  |  提交时间：2013/05/07
Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures 期刊论文
applied physics letters, 2012, 卷号: 100, 期号: 8, 页码: 82101
Liu, GP; Wu, J; Zhao, GJ; Liu, SM; Mao, W; Hao, Y; Liu, CB; Yang, SY; Liu, XL; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：11/0  |  提交时间：2013/03/17
Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7
作者:  Lv, Yuanjie;  Lin, Zhaojun;  Meng, Lingguo;  Luan, Chongbiao;  Cao, Zhifang
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/23
A theoretical calculation of the impact of gan cap and alxga1-xn barrier thickness fluctuations on two-dimensional electron gas in a gan/alxga1-xn/gan heterostructure 期刊论文
Ieee transactions on electron devices, 2011, 卷号: 58, 期号: 12, 页码: 4272-4275
作者:  Liu, Guipeng;  Wu, Ju;  Lu, Yanwu;  Zhang, Biao;  Li, Chengming
收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12

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