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A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates 期刊论文
Vacuum, 2022, 卷号: 201
作者:  Wang, Xiaoye;  Bai, Xue;  Yang, Xiaoguang;  Du, Wenna;  Yang, Tao
收藏  |  浏览/下载：17/0  |  提交时间：2022/06/20
Polychromatic emission in a wide energy range from inp-inas-inp multi-shell nanowires 期刊论文
Nanotechnology, 2019, 卷号: 30, 期号: 19
作者:  Battiato,S;  Wu,S;  Zannier,V;  Bertoni,A;  Goldoni,G
收藏  |  浏览/下载：82/0  |  提交时间：2019/05/09
Photoluminescence enhancement of the single InAs quantum dots through plasmonic Au island films 期刊论文
journal of applied physics, 2014, 卷号: 115, 期号: 12, 页码: 123104
Wang, HY; Dou, XM; Yang, S; Su, D; Jiang, DS; Ni, HQ; Niu, ZC; Sun, BQ
收藏  |  浏览/下载：20/0  |  提交时间：2015/04/02
Dependence of the electrical and optical properties on growth interruption in alas/in0.53ga0.47as/inas resonant tunneling diodes 期刊论文
Nanoscale research letters, 2011, 卷号: 6, 期号: 1
作者:  Zhang,Yang;  Guan,Min;  Liu,Xingfang;  Zeng,Yiping
收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12
Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy 期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
Jin, L; Zhou, HY; Qu, SC; Wang, ZG
收藏  |  浏览/下载：91/0  |  提交时间：2012/02/06
The two- to three-dimensional growth transition of inas/gaas epitaxy layer studied by reflectance difference spectroscopy 期刊论文
Journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: 4
作者:  Zhou, G. Y.;  Chen, Y. H.;  Tang, C. G.;  Liang, L. Y.;  Jin, P.
收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12
Energetics of the growth mode transition in InAs/GaAs(001) small quantum dot formation: A first-principles study 期刊论文
2010, 2010
Liu, En-Zuo; Wang, Chong-Yu
收藏  |  浏览/下载：2/0
Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots 期刊论文
2010, 2010
Zhou, WM; Wang, CY; Chen, YH; Wang, ZG
收藏  |  浏览/下载：3/0
Formation trends of ordered self-assembled nanoislands on stepped substrates 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073512
Liang S (Liang S.); Zhu HL (Zhu H. L.); Kong DH (Kong D. H.); Wang W (Wang W.)
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/14
The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083513
Zhou GY (Zhou G. Y.); Chen YH (Chen Y. H.); Tang CG (Tang C. G.); Liang LY (Liang L. Y.); Jin P (Jin P.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：13/0  |  提交时间：2010/12/05

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