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CORC

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A tellurium short-wave infrared photodetector with fast response and high specific detectivity 期刊论文
NANOSCALE, 2022
作者:  Yan, Yafei;  Xia, Kai;  Gan, Wei;  Yang, Kemeng;  Li, Gang
收藏  |  浏览/下载：19/0  |  提交时间：2022/12/23
Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors 期刊论文
CHINESE PHYSICS B, 2022, 卷号: 31, 期号: 3, 页码: 6
作者:  Lin, Zheng-Zhao;  Lu, Ling;  Zheng, Xue-Feng;  Cao, Yan-Rong;  Hu, Pei-Pei
收藏  |  浏览/下载：23/0  |  提交时间：2022/04/11
Naphthalene diimide based near-infrared luminogens with aggregation-induced emission characteristics for biological imaging and high mobility ambipolar transistors 期刊论文
SCIENCE CHINA-CHEMISTRY, 2020, 页码: 10
作者:  Guo, De;  Li, Lin;  Zhu, Xianqi;  Heeney, Martin;  Li, Jing
收藏  |  浏览/下载：21/0  |  提交时间：2020/08/24
Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 814, 页码: 6
作者:  X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen
收藏  |  浏览/下载：3/0  |  提交时间：2021/07/06
Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2019, 卷号: 7, 期号: 19, 页码: 5677
作者:  Li, Guanjie;  Li, Xiaomin;  Zhao, Junliang;  Zhu, Qiuxiang;  Chen, Yongbo
收藏  |  浏览/下载：42/0  |  提交时间：2019/12/26
Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit 期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: 34, 页码: 3711-3728
作者:  Xie, Ruiliang;  Yang, Xu;  Xu, Guangzhao;  Wei, Jin;  Wang, Yuru
收藏  |  浏览/下载：28/0  |  提交时间：2019/11/19
Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor 期刊论文
MATERIALS, 2019, 卷号: 12
作者:  Fu, Yafei;  Sun, Jie;  Du, Zaifa;  Guo, Weiling;  Yan, Chunli
收藏  |  浏览/下载：14/0  |  提交时间：2019/11/21
Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors 期刊论文
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2019, 卷号: 129, 页码: 54-60
作者:  Zhu, Gengchang;  Liang, Guangda;  Zhou, Yang;  Chen, Xiufang;  Xu, Xiangang
收藏  |  浏览/下载：23/0  |  提交时间：2019/12/11
Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors 期刊论文
Journal of Physics and Chemistry of Solids, 2019, 卷号: 129, 页码: 54-60
作者:  Zhu, Gengchang;  Liang, Guangda;  Zhou, Yang;  Chen, Xiufang;  Xu, Xiangang
收藏  |  浏览/下载：19/0  |  提交时间：2019/12/11
Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/ GaN-based high electron mobility transistors 期刊论文
Semiconductor Science and Technology, 2019, 卷号: 34, 期号: 12, 页码: 125006
作者:  Weizhen Yao;  Lianshan Wang;  Fangzheng Li;  Yulin Meng;  Shaoyan Yang ;   Zhanguo Wang
收藏  |  浏览/下载：7/0  |  提交时间：2020/07/30

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