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CORC

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The plasma electrolytic oxidation micro-discharge channel model and its microstructure characteristic based on Ti tracer 会议论文
Hangzhou, PEOPLES R CHINA, NOV 12-14, 2016
作者:  Gao FY(高方圆);  Hao L(郝丽);  Li G(李光);  Xia Y(夏原);  Li, G (reprint author), Chinese Acad Sci, Inst Mech, 15 Beisihuanxi Rd, Beijing 100190, Peoples R China.
收藏  |  浏览/下载：27/0  |  提交时间：2018/01/16
A novel analog power supply for gain control of the multi-pixel photon counter (mppc) 期刊论文
Nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 2017, 卷号: 850, 页码: 35-41
作者:  Li, Zhengwei;  Liu, Congzhan;  Xu, Yupeng;  Yan, Bo;  Li, Yanguo
收藏  |  浏览/下载：41/0  |  提交时间：2019/04/23
Coupling electrokinetics with microbial biodegradation enhances the removal of cycloparaffinic hydrocarbons in soils 期刊论文
JOURNAL OF HAZARDOUS MATERIALS, 2016, 卷号: 320, 页码: 591-601
作者:  Yuan, Ye;  Guo, Shuhai;  Li, Fengmei;  Wu, Bo;  Yang, Xuelian
收藏  |  浏览/下载：17/0  |  提交时间：2019/06/04
4H-SiC Step Trench Gate Power Metal-Oxide-Semiconductor Field-Effect Transistor 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2016, 卷号: 37, 期号: [db:dc_citation_issue], 页码: 633-635
作者:  Wang, Ying;  Tian, Kai;  Hao, Yue;  Yu, Cheng-Hao;  Liu, Yan-Juan
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/02
A High-Voltage (> 600 V) N-Island LDMOS With Step-Doped Drift Region in Partial SOI Technology 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016
Hu, Yue; Wang, Hao; Du, Caixia; Ma, Miaomiao; Chan, Mansun; He, Jin; Wang, Gaofeng
收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03
Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4 as Gate Dielectric and Passivation Layer 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 卷号: 63, 期号: 2
作者:  Zhang, ZL(张志利);  Yu, GH(于国浩);  Zhang, XD(张晓东);  Deng, XG(邓旭光);  Li, SM(李水明)
收藏  |  浏览/下载：36/0  |  提交时间：2017/03/11
A High-Voltage (> 600 V) N-Island LDMOS With Step-Doped Drift Region in Partial SOI Technology 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 卷号: 63, 期号: 5
作者:  Hu, Yue;  Wang, Hao;  Du, Caixia;  Ma, Miaomiao;  Chan, Mansun
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/05
16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator 期刊论文
ELECTRONICS LETTERS, 2015, 卷号: 51, 期号: 15, 页码: 2
作者:  Zhang, ZL(张志利);  Yu, GH(于国浩);  Zhang, XD(于国浩);  Tan, SX;  Wu, DD(吴冬东)
收藏  |  浏览/下载：43/0  |  提交时间：2015/12/31
An Optimized Structure of 4H-SiC U-Shaped Trench Gate MOSFET 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 卷号: 62, 期号: [db:dc_citation_issue], 页码: 2774-2778
作者:  Wang, Ying;  Tian, Kai;  Hao, Yue;  Yu, Cheng-Hao;  Liu, Yan-Juan
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/02
A betavoltaic microcell based on Au/s-SWCNTs/Ti Schottky junction 期刊论文
sensors and actuators a physical, 2014
Chang, Yiyang; Chen, Changchuan; Liu, Peng; Zhang, Jinwen
收藏  |  浏览/下载：7/0  |  提交时间：2015/11/10

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