| A High-Voltage (> 600 V) N-Island LDMOS With Step-Doped Drift Region in Partial SOI Technology | |
| Hu, Yue; Wang, Hao; Du, Caixia; Ma, Miaomiao; Chan, Mansun; He, Jin; Wang, Gaofeng | |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 2016 | |
| 卷号 | 63期号:5 |
| 关键词 | Breakdown voltage (BV) lateral double-diffused MOS (LDMOS) N-island (NIS) partial silicon-on-insulator (PSOI) step-doped drift (SDD) region |
| ISSN号 | 0018-9383 |
| DOI | 10.1109/TED.2015.2487345 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE |
| 语种 | 英语 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4097361 |
| 专题 | 武汉大学 |
| 推荐引用方式 GB/T 7714 | Hu, Yue,Wang, Hao,Du, Caixia,et al. A High-Voltage (> 600 V) N-Island LDMOS With Step-Doped Drift Region in Partial SOI Technology[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2016,63(5). |
| APA | Hu, Yue.,Wang, Hao.,Du, Caixia.,Ma, Miaomiao.,Chan, Mansun.,...&Wang, Gaofeng.(2016).A High-Voltage (> 600 V) N-Island LDMOS With Step-Doped Drift Region in Partial SOI Technology.IEEE TRANSACTIONS ON ELECTRON DEVICES,63(5). |
| MLA | Hu, Yue,et al."A High-Voltage (> 600 V) N-Island LDMOS With Step-Doped Drift Region in Partial SOI Technology".IEEE TRANSACTIONS ON ELECTRON DEVICES 63.5(2016). |
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