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CORC

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Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors 期刊论文
Progress in Quantum Electronics, 2022, 卷号: 83, 页码: 29
作者:  J. L. Yang;  K. W. Liu;  X. Chen and D. Z. Shen
收藏  |  浏览/下载：0/0  |  提交时间：2023/06/14
Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping 期刊论文
Physical Chemistry Chemical Physics, 2022, 卷号: 24, 期号: 9, 页码: 5529-5538
作者:  S. Q. Lu;  T. C. Zheng;  K. Jiang;  X. J. Sun;  D. B. Li
收藏  |  浏览/下载：2/0  |  提交时间：2023/06/14
Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1236-1242
作者:  Hongliang Zhao;  Lin-An Yang;  Hao Zou;  Xiao-hua Ma;  Yue Hao
收藏  |  浏览/下载：35/0  |  提交时间：2019/12/17
Realization of an efficient electron source by ultraviolet-light-assisted field emission from a one-dimensional ZnO nanorods/n-GaN heterostructure photoconductive detector 期刊论文
Nanoscale, 2019, 卷号: 11, 期号: 3, 页码: 1351-1359
作者:  Y.R.Chen;  Z.W.Zhang;  H.Jiang;  Z.M.Li;  G.Q.Miao
收藏  |  浏览/下载：0/0  |  提交时间：2020/08/24
A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability 期刊论文
Journal of Semiconductors, 2018, 卷号: 39, 页码: 7400401-7400411
作者:  Haipeng Zhang;  Wang DJ(王德君)
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/02
Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs 会议论文
作者:  Cui, Miao;  Cai, Yutao;  Lam, Sang;  Liu, Wen;  Zhao, Chun
收藏  |  浏览/下载：5/0  |  提交时间：2019/11/26
Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si 期刊论文
ACS Photonics, 2018, 卷号: 5, 期号: 3, 页码: 699-704
作者:  Feng, Meixin;  Li, Zengcheng;  Wang, Jin;  Zhou, Rui;  Sun, Qian
收藏  |  浏览/下载：2/0  |  提交时间：2019/09/17
N2 plasma treatment for gate leakage reduction in AlGaN/GaN HEMT 会议论文
作者:  Wang XH(王鑫华);  Huang S(黄森);  Chen XJ(陈晓娟);  Wei K(魏珂);  Liu GG(刘果果)
收藏  |  浏览/下载：12/0  |  提交时间：2018/07/20
Theoretical analysis of AlGaN/GaN resonant tunnelling diodes with step heterojunctions spacer and sub-quantum well 期刊论文
33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, 卷号: Vol.864
作者:  Liu, Y.;  Gao, B.;  Gong, M.
收藏  |  浏览/下载：3/0  |  提交时间：2019/02/25
Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs 期刊论文
IEEE Transactions on Electron Devices, 2017, 卷号: Vol.64 No.8, 页码: 3139-3144
作者:  Li, Y;  Guo, YX;  Zhang, K;  Zou, XM;  Wang, JL
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/31

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