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浏览/检索结果: 共3条，第1-3条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method - art. no. 60202F 会议论文 conference on optoelectronic materials and devices for optical communications, shanghai, peoples r china, nov 07-10, 2005 Xu Y; Li YZ; Song GF; Gan QQ; Cao Q; Guo L; Chen LH 收藏  |  浏览/下载：107/26  |  提交时间：2010/03/29 AIGaInP laser diodes   GaInAsP/AIGaInP laser diodes with AIGaAs type II carrier blocking layer in the waveguide 专利 专利号: US6298077, 申请日期: 2001-10-02, 公开日期: 2001-10-02 作者:  HE, XIAUGUANG 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/26 Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes 会议论文 conference on display devices and systems ii, beijing, peoples r china, sep 16-17, 1998 Wang GH; Ma XY; Zhang YF; Peng HI; Wang ST; Li YZ; Chen LH 收藏  |  浏览/下载：15/0  |  提交时间：2010/10/29 LED  coupled distributed Bragg reflector  MOCVD  AlGaInP