Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method - art. no. 60202F

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method - art. no. 60202F
	Xu Y ; Li YZ ; Song GF ; Gan QQ ; Cao Q ; Guo L ; Chen LH
	2005
会议名称	conference on optoelectronic materials and devices for optical communications
会议日期	nov 07-10, 2005
会议地点	shanghai, peoples r china
关键词	AIGaInP laser diodes
页码	6020: f202-f202
通讯作者	xu, y, chinese acad sci, inst semicond, beijing 100083, peoples r china.
中文摘要	in algainp/gainp multi-quantum well (mqw) lasers, the electron leakage current is a much more serious problem than that in laser diodes with longer wavelength. to further improve the output performance, the leakage current should be analyzed. in this letter, the temperature dependence of electrical derivative characteristics in algainp/gainp multi-quantum well lasers was measured, and the potential barrier for electron leakage was obtained. with the help of secondary ion mass spectroscopy (sims) measurement, theoretical analysis of the potential barrier was presented and compared with the measurement result. the influence of p-cladding doping level and doping profile on the potential barrier was discussed, and this can be helpful in metalorganic chemical vapor deposition (mocvd) growth.
英文摘要	in algainp/gainp multi-quantum well (mqw) lasers, the electron leakage current is a much more serious problem than that in laser diodes with longer wavelength. to further improve the output performance, the leakage current should be analyzed. in this letter, the temperature dependence of electrical derivative characteristics in algainp/gainp multi-quantum well lasers was measured, and the potential barrier for electron leakage was obtained. with the help of secondary ion mass spectroscopy (sims) measurement, theoretical analysis of the potential barrier was presented and compared with the measurement result. the influence of p-cladding doping level and doping profile on the potential barrier was discussed, and this can be helpful in metalorganic chemical vapor deposition (mocvd) growth.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; spie.; chinese opt soc.; china inst commun.; shanghai jiao tong univ.; alcatel shanghai bell.; shanghai inst opt & fine mech.; photon bridges.; ieee commun soc.; ieee leos.; opt soc amer.; huawei technol.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	其他
会议主办者	spie.; chinese opt soc.; china inst commun.; shanghai jiao tong univ.; alcatel shanghai bell.; shanghai inst opt & fine mech.; photon bridges.; ieee commun soc.; ieee leos.; opt soc amer.; huawei technol.
会议录	optoelectronic materials and devices for optical communications丛书标题: proceedings of the society of photo-optical instrumentation engineers (spie)
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	光电子学
语种	英语
ISSN号	0277-786x
ISBN号	0-8194-6051-6
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/9904]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu Y,Li YZ,Song GF,et al. Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method - art. no. 60202F[C]. 见:conference on optoelectronic materials and devices for optical communications. shanghai, peoples r china. nov 07-10, 2005.