×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [116]
内容类型
期刊论文 [95]
会议论文 [21]
发表日期
2011 [6]
2010 [3]
2009 [5]
2008 [7]
2007 [2]
2006 [14]
更多...
学科主题
半导体材料 [55]
半导体物理 [27]
光电子学 [11]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共116条,第1-10条
帮助
限定条件
专题:半导体研究所
第一署名单位
第一作者单位
通讯作者单位
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Formation of shallow acceptors in zno doped by lithium with the addition of nitrogen
期刊论文
Journal of physics and chemistry of solids, 2011, 卷号: 72, 期号: 6, 页码: 725-729
作者:
Gai, Yanqin
;
Tang, Gang
;
Li, Jingbo
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2019/05/12
Semiconductors
Ab initio calculations
Defects
Electronic structure
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
收藏
  |  
浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H
;
Zhou K
;
Pang JB
;
Shao YD
;
Wang Z
;
Zhao YW
收藏
  |  
浏览/下载:53/10
  |  
提交时间:2011/07/05
UNDOPED GALLIUM ANTIMONIDE
SELF-DIFFUSION
NATIVE DEFECTS
N-TYPE
CRYSTALS
CATHODOLUMINESCENCE
PHOTOLUMINESCENCE
SEMICONDUCTORS
SPECTROSCOPY
LUMINESCENCE
Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy
期刊论文
materials science in semiconductor processing, 2011
Hu, Qiang
;
Wei, Tongbo
;
Duan, Ruifei
;
Yang, Jiankun
;
Huo, Ziqiang
;
Zeng, Yiping
;
Xu, Shu
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2012/06/14
Carrier concentration
Etching
Gallium alloys
Optical properties
Point defects
Raman spectroscopy
Semiconducting gallium compounds
Vapor phase epitaxy
Vapors
Influence of growth conditions on the V-defects in InGaN/GaN MQWs
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103001
Ji, Panfeng
;
Liu, Naixin
;
Wei, Xuecheng
;
Liu, Zhe
;
Lu, Hongxi
;
Wang, Junxi
;
Li, Jinmin
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2012/06/14
Gallium nitride
Growth temperature
Semiconductor quantum wells
Surface defects
Design of a photonic crystal microcavity for biosensing
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 3, 页码: 34008
Li, Junhua
;
Kan, Qiang
;
Wang, Chunxia
;
Su, Baoqing
;
Xie, Yiyang
;
Chen, Hongda
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/06/13
Defects
Finite difference time domain method
Light refraction
Photonic crystals
Refractive index
Refractometers
Defects in gallium nitride nanowires: First principles calculations
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044305
Wang ZG (Wang Zhiguo)
;
Li JB (Li Jingbo)
;
Gao F (Gao Fei)
;
Weber WJ (Weber William J.)
收藏
  |  
浏览/下载:105/1
  |  
提交时间:2010/10/11
CHEMICAL-VAPOR-DEPOSITION
GAN NANOWIRES
NATIVE DEFECTS
COMPLEXES
EPITAXY
GROWTH
ARRAYS
Optical properties of UO2 and PuO2
期刊论文
journal of nuclear materials, 2010, 卷号: 400, 期号: 2, 页码: 151-156
Shi HL (Shi Hongliang)
;
Chu MF (Chu Mingfu)
;
Zhang P (Zhang Ping)
收藏
  |  
浏览/下载:75/0
  |  
提交时间:2010/06/18
ELECTRONIC-STRUCTURE
URANIUM-DIOXIDE
POINT-DEFECTS
PHOTOEMISSION
ENERGY
APPROXIMATION
ENERGETICS
PLUTONIUM
CRYSTAL
SPECTRA
Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN
期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057104
Hou QF (Hou Qi-Feng)
;
Wang XL (Wang Xiao-Liang)
;
Xiao
;
HL (Xiao Hong-Ling)
;
Wang CM (Wang Cui-Mei)
;
Yang CB (Yang Cui-Bai)
;
Li JM (Li Jin-Min)
收藏
  |  
浏览/下载:255/64
  |  
提交时间:2010/05/24
N-TYPE GAN
DEEP LEVELS
SELENIDE
DEFECTS
Proton irradiation-induced defects in undoped gasb studied by positron lifetime spectroscopy and photoluminescence
期刊论文
Journal of optoelectronics and advanced materials, 2009, 卷号: 11, 期号: 8, 页码: 1122-1126
作者:
Li, Hui
;
Wang, Zhu
;
Zhou, Kai
;
Pang, Jingbiao
;
Ke, Junyu
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/05/12
Gasb
Proton irradiation
Defects
Positron lifetime
Photoluminescence
©版权所有 ©2017 CSpace - Powered by
CSpace