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湖南大学 [29]

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	Online junction temperature estimation method for SiC modules with built-in NTC sensor 期刊论文 CPSS Transactions on Power Electronics and Applications, 2019, 卷号: Vol.4 No.1, 页码: 94-99 作者: Ping Liu; Changle Chen; Xing Zhang; Shoudao Huang 收藏 \| 浏览/下载：101/0 \| 提交时间：2019/12/13 Silicon carbide Junctions MOSFET Temperature sensors Impedance Heating systems Mathematical model Boundary conditions junction temperature silicon carbide (SiC) thermal model.
	Carrier-Based Double Integral Sliding-Mode Controller of Class-D Amplifier 期刊论文 IEEE Access, 2019, 卷号: Vol.7, 页码: 1275-1283 作者: Xiaohua Wu; Haider Zaman; Xiancheng Zheng; Shahbaz Khan; Husan Ali 收藏 \| 浏览/下载：13/0 \| 提交时间：2019/12/13 Mathematical model Frequency response Q-factor Control systems Switching frequency Silicon carbide Voltage control Carrier-based double integral sliding-mode (CBDISM) class-D amplifier Q-factor SiC MOSFET
	High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation 期刊论文 NANOSCALE RESEARCH LETTERS, 2019, 卷号: Vol.14 作者: Liu, Huan; Han, Genquan; Liu, Yan; Tang, Xiaosheng; Yang, Jingchen 收藏 \| 浏览/下载：10/0 \| 提交时间：2019/12/13 Germanium MOSFET Amorphous Si passivation Mobility Surface orientation
	Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch 期刊论文 IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.3, 页码: 2771-2780 作者: Jun Wang; Xi Jiang; Zongjian Li; Z. John Shen 收藏 \| 浏览/下载：9/0 \| 提交时间：2019/12/13 MOSFET Silicon carbide Logic gates Insulated gate bipolar transistors Switches Leakage currents Silicon Failure analysis gate control hybrid switch (HyS) IGBT short-circuit (SC) Silicon Carbide (SiC) $\scriptscriptstyle{\text{MOSFET}}$
	Prediction of Stable and High-Performance Charge Transport in Zigzag Tellurene Nanoribbons 期刊论文 IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.5, 页码: 2365-2369 作者: Yawei Lv; Yuan Liu; Wenjing Qin; Sheng Chang; Changzhong Jiang 收藏 \| 浏览/下载：19/0 \| 提交时间：2019/12/13 Bonding Transistors Nanoribbons Photonic band gap Physics Graphene Discrete Fourier transforms Current density edge saturation first principles MOSFET tellurene nanoribbon (TNR)
	Prediction of Stable and High-Performance Charge Transport in Zigzag Tellurene Nanoribbons. 期刊论文 IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.5, 页码: 2365-2369 作者: Lv, YW; Liu, Y; Qin, WJ; Chang, S; Jiang, CZ 收藏 \| 浏览/下载：15/0 \| 提交时间：2019/12/17 Current density edge saturation first principles MOSFET tellurene nanoribbon (TNR)
	Single-magnetic equaliser without any sensors for series-connected battery strings 期刊论文 IET POWER ELECTRONICS, 2019, 卷号: Vol.12 No.9, 页码: 2312-2320 作者: Liu, FL; Zou, RM; Su, M; Sun, Y; Liu, YL 收藏 \| 浏览/下载：12/0 \| 提交时间：2019/12/17 secondary cells transformer windings MOSFET single-magnetic equaliser series-connected battery strings battery voltages adjacent cells complementary control signals circuit topology operating principles voltage balance analysis lithium-ion cells automatic cell-to-cell equaliser MOSFET transformer winding
	Gate Control Optimization of Si/SiC Hybrid Switch for Junction Temperature Balance and Power Loss Reduction 期刊论文 IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.2, 页码: 1744-1754 作者: Jun Wang; Zongjian Li; Xi Jiang; Cheng Zeng; Z. John Shen 收藏 \| 浏览/下载：8/0 \| 提交时间：2019/12/13 Switches Insulated gate bipolar transistors Silicon carbide MOSFET Logic gates Silicon Gate control hybrid switch IGBT junction temperature mosfet power loss SiC
	Threshold Voltage Characteristics for Silicon Nanowire Field-Effect Transistor With a Double-Layer Gate Structure 期刊论文 IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.1, 页码: 771-776 作者: Hongguan Yang 收藏 \| 浏览/下载：11/0 \| 提交时间：2019/12/13 Logic gates Threshold voltage Silicon MOSFET Transconductance Nanoscale devices Double-layer gate structure MOS devices short-channel effect silicon nanowire (Si-NW) threshold voltage characteristics
	High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation 期刊论文 Nanoscale Research Letters, 2019, 卷号: Vol.14 No.1 作者: Huan Liu; Genquan Han; Yan Liu; Xiaosheng Tang; Jingchen Yang 收藏 \| 浏览/下载：6/0 \| 提交时间：2019/12/13 Germanium MOSFET Amorphous Si passivation Mobility Surface orientation

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