QQ客服 官方微博 反馈留言

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 专题：西安交通大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Threshold voltage model of total ionizing irradiated short-channel FD-SOI MOSFETs with Gaussian doping profile 期刊论文 IEEE Transactions on Nuclear Science, 2018, 卷号: 65, 页码: 2679-2690 作者:  Huang, Huixiang;  Wei, Sufen;  Pan, Jinyan;  Xu, Wenbin;  Chen, Chi-Cheng 收藏  |  浏览/下载：6/0  |  提交时间：2019/11/26 Gaussians  Integrated circuit modeling  Interface traps  MOS-FET  Short-channel effect  Silicon on insulator (SOI)  Threshold voltage modeling  Total dose radiation   Research of a Novel Ultra-High Pressure Sensor with High-Temperature Resistance 期刊论文 MICROMACHINES, 2018, 卷号: 9 作者:  Zhang, Guo-Dong;  Zhao, Yu-Long;  Zhao, Yun;  Wang, Xin-Chen;  Wei, Xue-Yong 收藏  |  浏览/下载：8/0  |  提交时间：2019/11/26 high-temperature resistance  microelectromechanical systems (MEMS) technology  silicon-on-insulator (SOI) piezoresistive element  small size  ultra-high pressure sensor   Modeling a Si homojunction SOI-Tunnel FET with configurable voltage difference on gates 会议论文 作者:  Wei, Sufen;  Zhang, Guohe;  Liu, Jing;  Huang, Huixiang;  Geng, Li 收藏  |  浏览/下载：13/0  |  提交时间：2019/11/26 Band to band tunneling  Channel region  N type silicon  Potential barriers  Silicon on insulator (SOI)  Technology computer aided design  Tunnel FET (TFET)  Voltage difference   Enhanced Radiation Hardness in SOI MOSFET With Embedded Tunnel Diode Layer 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 页码: 2369-2376 作者:  Huang, Huixiang;  Wei, Sufen;  Tang, Kai;  Pan, Jinyan;  Xu, Wenbin 收藏  |  浏览/下载：11/0  |  提交时间：2019/11/26 partially depleted silicon on insulator (PD SOI)  Body contact  floating body effects (FBEs)  tunnel diode   A compact subthreshold swing model of ultra-Thin body ultra-Thin box SOI MOSFETs with Gaussian doping profile 会议论文 作者:  Wei, Sufen;  Zhang, Guohe;  Liu, Jing;  Huang, Huixiang;  Geng, Li 收藏  |  浏览/下载：7/0  |  提交时间：2019/11/26 Charge centroid  Gaussian doping  Gaussian Doping Profiles  Non-uniform doping  Silicon on insulator (SOI)  Subthreshold swing  Technology computer aided design  Two Dimensional (2 D)   A double-end fixed beam structure of MEMS piezoresistive high g accelerometer 会议论文 作者:  Jing, Liang;  Yulong, Zhao;  Zhengyong, Duan;  Xiuping, Tang 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/10 high g  High-G accelerometers  Micro electromechanical system (MEMS)  Overload condition  Piezoresistive effects  Piezoresistive materials  Shock acceleration  Silicon on insulator (SOI)   High-temperature piezoresistive pressure sensitive silicon chip and electrostatic bonding process 期刊论文 Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology, 2011, 卷号: 31, 期号: [db:dc_citation_issue], 页码: 1162-1167 作者:  Zhao, Li-Bo;  Zhao, Yu-Long;  Rahman, Hebibul;  Fang, Xu-Dong;  Li, Jian-Bo 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/10 Electrostatic bonding  Engineering applications  High temperature  High-temperature pressure sensor  Inverted-cup  MEMS (microelectro-mechanical-system)  Pressure sensitive  Silicon on insulator (SOI)   Inverted-Cup High-Temperature and High-Frequency Piezoresistive Pressure Sensor 期刊论文 Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University, 2010, 卷号: 44, 期号: [db:dc_citation_issue], 页码: 50-54 作者:  Zhao, Libo;  Zhao, Yulong;  Li, Jianbo;  Liang, Jianqiang;  Li, Yong 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/10 Flush-type  High-temperature adhesives  Micro electromechanical system (MEMS)  Micro electro mechanical system  Piezo-resistive  Piezoresistive pressure sensors  Pre-tightening forces  Silicon on insulator (SOI)   Threshold voltage model of short-channel FD-SOI MOSFETs with vertical Gaussian profile 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 卷号: 55, 期号: 3, 页码: 803-809 作者:  Zhang, Guohe;  Shao, Zhibiao;  Zhou, Kai 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/18 MOSFETs  fully depleted (FD) silicon-on-insulator (SOI)  Gaussian  threshold voltage model