CORC

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CORC

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Enhanced efficiency of self-healing of Cr2AlC 期刊论文
MATERIALS LETTERS, 2018, 卷号: 227, 页码: 51-54
作者:  Yang, HJ;  Shao, XH;  Pei, YT;  Zhang, ZF;  De Hosson, JTM
收藏  |  浏览/下载：21/0  |  提交时间：2018/12/25
Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes 期刊论文
ADVANCED MATERIALS, 2018, 卷号: 30, 期号: 31
作者:  Zheng, Jianyun;  Lyu, Yanhong;  Xie, Chao;  Wang, Ruilun;  Tao, Li
收藏  |  浏览/下载：45/0  |  提交时间：2018/12/28
Research on growth and defects of 5 in. YCOB single crystal 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: 488, 页码: 23, 28
作者:  Tu, Xiaoniu;  Wang, Sheng;  Xiong, Kainan;  Zheng, Yanqing;  Shi, Erwei
收藏  |  浏览/下载：74/0  |  提交时间：2018/12/28
Interpreting radiation-induced segregation and enhanced radiation tolerance of single-phase concentrated solid-solution alloys from first principles 期刊论文
MATERIALS LETTERS, 2017, 卷号: 202, 页码: 120-122
Wang, Xin-Xin; Niu, Liang-Liang; Wang, Shaoqing
收藏  |  浏览/下载：30/0  |  提交时间：2017/08/17
The use of nanocavities for the fabrication of ultrathin buried oxide layers 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 1, 页码: 11903-11903
Ou, X; Kogler, R; Mucklich, A; Skorupa, W; Moller, W; Wang, X; Vines, L
收藏  |  浏览/下载：19/0  |  提交时间：2012/03/24
Efficient oxygen gettering in Si by coimplantation of hydrogen and helium 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 16, 页码: 161907-161907
Ou, X; Kogler, R; Mucklich, A; Skorupa, W; Moller, W; Wang, X; Gerlach, JW; Rauschenbach, B
收藏  |  浏览/下载：11/0  |  提交时间：2012/03/24
Core structures of the a-edge dislocation in InN 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 11, 页码: 111901-111901
Lei, HP; Ruterana, P; Nouet, G; Jiang, XY; Chen, J
收藏  |  浏览/下载：14/0  |  提交时间：2012/03/24
Effects of buried oxide layer on indium diffusion in separation by implantation of oxygen 期刊论文
JOURNAL OF APPLIED PHYSICS, 2004, 卷号: 96, 期号: 6, 页码: 3217-3220
Chen, P; Zhu, M; Fu, RKY; Chu, PK; An, ZH; Liu, W; Montgomery, N; Biswas, S
收藏  |  浏览/下载：20/0  |  提交时间：2012/03/24
Low-temperature photoluminescence of hydrogen ion and plasma implanted silicon and porous silicon 期刊论文
JOURNAL OF APPLIED PHYSICS, 2004, 卷号: 96, 期号: 1, 页码: 248-251
An, ZH; Fu, RKY; Li, WL; Chen, P; Chu, PK; Li, KF; Luo, L; Tam, HL; Cheah, KW; Lin, CL
收藏  |  浏览/下载：9/0  |  提交时间：2012/03/24
Comparison between the different implantation orders in H+ and He+ coimplantation 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 卷号: 34, 期号: 4, 页码: 477-482
Duo, XZ; Liu, WL; Zhang, MA; Wang, LW; Lin, CL; Okuyama, M; Noda, M; Cheung, WY; Chu, PK; Hu, PG; Wang, SX; Wang, LM
收藏  |  浏览/下载：20/0  |  提交时间：2012/03/24

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