Efficient oxygen gettering in Si by coimplantation of hydrogen and helium

	Efficient oxygen gettering in Si by coimplantation of hydrogen and helium
	Ou, X ; Kogler, R ; Mucklich, A ; Skorupa, W ; Moller, W ; Wang, X ; Gerlach, JW ; Rauschenbach, B
刊名	APPLIED PHYSICS LETTERS
	2008
卷号	93 期号:16 页码:161907-161907
关键词	INDUCED CAVITIES SILICON IMPLANTATION DEFECTS COPPER
ISSN号	0003-6951
通讯作者	Ou, X, Forschungszentrum Rossendorf, PF 510119, D-01314 Dresden, Germany
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95026]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Ou, X,Kogler, R,Mucklich, A,et al. Efficient oxygen gettering in Si by coimplantation of hydrogen and helium[J]. APPLIED PHYSICS LETTERS,2008,93(16):161907-161907.
APA	Ou, X.,Kogler, R.,Mucklich, A.,Skorupa, W.,Moller, W.,...&Rauschenbach, B.(2008).Efficient oxygen gettering in Si by coimplantation of hydrogen and helium.APPLIED PHYSICS LETTERS,93(16),161907-161907.
MLA	Ou, X,et al."Efficient oxygen gettering in Si by coimplantation of hydrogen and helium".APPLIED PHYSICS LETTERS 93.16(2008):161907-161907.