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科研机构
半导体研究所 [9]
内容类型
期刊论文 [8]
会议论文 [1]
发表日期
2011 [1]
2006 [2]
2003 [1]
2002 [1]
2001 [3]
1998 [1]
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半导体物理 [9]
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ZnO nanowire arrays coating on TiO(2) nanoparticles as a composite photoanode for a high efficiency DSSC
期刊论文
chemical communications, 2011, 卷号: 47, 期号: 40, 页码: 11246-11248
Wang, ML
;
Wang, Y
;
Li, JB
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浏览/下载:8/0
  |  
提交时间:2012/01/06
SENSITIZED SOLAR-CELLS
TRANSPORT
RECOMBINATION
Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots
期刊论文
thin solid films, 2006, 卷号: 498, 期号: 1-2, 页码: 188-192
Kong LM
;
Cai JF
;
Wu ZY
;
Gong Z
;
Niu ZC
;
Feng ZC
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  |  
浏览/下载:52/0
  |  
提交时间:2010/04/11
time-resolved photoluminescence
InAs self-assembled QDs
migration of carriers
1.3 MU-M
DEPENDENT RADIATIVE DECAY
THERMAL REDISTRIBUTION
EXCITONS
RECOMBINATION
RELAXATION
LIFETIMES
EMISSION
EPITAXY
LASERS
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
会议论文
conference on ultrafast phenomena in semiconductors and nanostructure materials x, san jose, ca, jan 23-25, 2006
Sun, Z (Sun, Z.)
;
Xu, ZY (Xu, Z. Y.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
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  |  
浏览/下载:182/36
  |  
提交时间:2010/03/29
GaInNAs/GaAs quantum wells
optical properties
nonradiative recombination effect
time-resolved photoluminescence
PL decay dynamics
PL thermal quenching
MOLECULAR-BEAM EPITAXY
GAASN ALLOYS
EXCITATION
A novel method of determining semiconductor parameters in EBIC and SEBIV modes of SEM
期刊论文
semiconductor science and technology, 2003, 卷号: 18, 期号: 4, 页码: 361-366
Zhu SQ
;
Rau EI
;
Yang FH
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  |  
浏览/下载:101/0
  |  
提交时间:2010/08/12
SURFACE RECOMBINATION VELOCITY
DIFFUSION LENGTH
LINE SCAN
EXTRACTION
Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers
期刊论文
ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318
Leung BH
;
Chan NH
;
Fong WK
;
Zhu CF
;
Ng SW
;
Lui HF
;
Tong KY
;
Surya C
;
Lu LW
;
Ge WK
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  |  
浏览/下载:129/0
  |  
提交时间:2010/08/12
deep level transient Fourier spectroscopy
(DLTFS)
gallium nitride (GaN)
intermediate-temperature buffer layer (ITBF)
low-frequency noise
RESONANT-TUNNELING DIODES
GENERATION-RECOMBINATION NOISE
RANDOM-TELEGRAPH NOISE
ULTRAVIOLET PHOTODETECTORS
DEVICES
Exciton localization in In0.15Ga0.85As/GaAs quantum wire structures grown on (553)B-oriented GaAs substrate
期刊论文
journal of applied physics, 2001, 卷号: 90, 期号: 10, 页码: 5111-5114
Liu BL
;
Liu B
;
Xu ZY
;
Ge WK
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  |  
浏览/下载:115/11
  |  
提交时间:2010/08/12
MOLECULAR-BEAM EPITAXY
CORRUGATED GAAS/ALAS SUPERLATTICES
RADIATIVE LIFETIMES
WELLS
RECOMBINATION
SURFACES
DEPENDENCE
DOTS
Photoluminescence of rapid-thermal annealed Mg-doped GaN films
期刊论文
solid-state electronics, 2001, 卷号: 45, 期号: 7, 页码: 1153-1157
Wang LS
;
Fong WK
;
Surya C
;
Cheah KW
;
Zheng WH
;
Wang ZG
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  |  
浏览/下载:73/5
  |  
提交时间:2010/08/12
p-type GaN
metalorganic chemical vapor deposition
photoluminescence
X-ray diffraction
rapid-thermal annealing
P-TYPE GAN
RECOMBINATION
EMISSION
ENERGY
BANDS
Effects of piezoelectricity and spontaneous polarization on electronic and optical properties of wurtzite III-V nitride quantum wells
期刊论文
journal of applied physics, 2001, 卷号: 90, 期号: 12, 页码: 6210-6216
Wan SP
;
Xia JB
;
Chang K
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  |  
浏览/下载:123/9
  |  
提交时间:2010/08/12
FIELD-EFFECT TRANSISTORS
RECOMBINATION DYNAMICS
WIDTH DEPENDENCE
GAN
EXCITONS
ABSORPTION
SPECTRA
SEMICONDUCTORS
LUMINESCENCE
CONSTANTS
Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy
期刊论文
applied physics letters, 1998, 卷号: 72, 期号: 17, 页码: 2123-2125
作者:
Xu B
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  |  
浏览/下载:37/0
  |  
提交时间:2010/08/12
SELF-ORGANIZATION
ISLANDS
RECOMBINATION
GAAS(100)
SURFACE
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