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科研机构
半导体研究所 [10]
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期刊论文 [10]
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2011 [3]
2008 [1]
2007 [1]
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2002 [2]
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半导体材料 [10]
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Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings
期刊论文
journal of nanoelectronics and optoelectronics, 2011, 卷号: 6, 期号: 1, 页码: 51-57
Ding F
;
Li B
;
Akopian N
;
Perinetti U
;
Chen YH
;
Peeters FM
;
Rastelli A
;
Zwiller V
;
Schmidt OG
收藏
  |  
浏览/下载:71/5
  |  
提交时间:2011/07/05
Quantum Ring
Quantum Dot
Neutral Exciton
Aharonov Bohm Effect
Gate Controlled
Selective Etching
ENERGY-SPECTRA
Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy
期刊论文
materials science in semiconductor processing, 2011
Hu, Qiang
;
Wei, Tongbo
;
Duan, Ruifei
;
Yang, Jiankun
;
Huo, Ziqiang
;
Zeng, Yiping
;
Xu, Shu
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2012/06/14
Carrier concentration
Etching
Gallium alloys
Optical properties
Point defects
Raman spectroscopy
Semiconducting gallium compounds
Vapor phase epitaxy
Vapors
Porous waveguide facilitated low divergence quantum cascade laser
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 64008
Yin, Wen
;
Lu, Quanyong
;
Liu, Wanfeng
;
Zhang, Jinchuan
;
Wang, Lijun
;
Liu, Junqi
;
Li, Lu
;
Liu, Fengqi
;
Wang, Zhanguo
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2012/06/14
Electrochemical etching
Quantum cascade lasers
Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching
期刊论文
solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 962-967
Gao, HY
;
Yan, FW
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
收藏
  |  
浏览/下载:58/4
  |  
提交时间:2010/03/08
InGaN/GaN multiple quantum wells
light-emitting diode
wet etching
inductively coupled plasma etching
Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers
期刊论文
modern physics letters b, 2007, 卷号: 21, 期号: 14, 页码: 859-866
Sun, J
;
Zhou, DY
;
Li, RY
;
Zhao, C
;
Ye, XL
;
Xu, B
;
Chen, YH
;
Wang, ZG
收藏
  |  
浏览/下载:64/5
  |  
提交时间:2010/03/08
III-V semiconductors
quantum dots
scanning electron microscopy
selective etching
Photoluminescence from C+ ion-implanted and electrochemical etched Si layers
期刊论文
applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8424-8427
Shi LW (Shi Liwei)
;
Wang Q (Wang Qiang)
;
Li YG (Li Yuguo)
;
Xue CS (Xue Chengshan)
;
Zhuang HZ (Zhuang Huizhao)
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/04/11
ion implantation
annealing
chemical etching
photoluminescence
POROUS SILICON
LUMINESCENCE
Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances
期刊论文
journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
Dong ZY
;
Zhao YW
;
Zeng YP
;
Duan ML
;
Sun WR
;
Jiao JH
;
Lin LY
收藏
  |  
浏览/下载:351/16
  |  
提交时间:2010/08/12
annealing
defects
etching
semiconducting indium phosphide
FE-DOPED INP
SEMIINSULATING INP
INDIUM-PHOSPHIDE
DEFECTS
DIFFUSION
CRYSTALS
WAFERS
Nanofabrication of grid-patterned substrate by holographic lithography
期刊论文
journal of crystal growth, 2002, 卷号: 236, 期号: 1-3, 页码: 141-144
Huang CJ
;
Zhu XP
;
Li C
;
Zuo YH
;
Cheng BW
;
Li DZ
;
Luo LP
;
Yu JZ
;
Wang QM
收藏
  |  
浏览/下载:119/4
  |  
提交时间:2010/08/12
etching
nanostructures
substrates
ASSEMBLED GE ISLANDS
SI(001)
GROWTH
DOTS
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching
期刊论文
journal of crystal growth, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
作者:
Zhao DG
收藏
  |  
浏览/下载:61/0
  |  
提交时间:2010/08/12
X-ray diffraction
etching
metalorganic vapor-phase epitaxy
nitrides
semiconducting III-V materials
LIGHT-EMITTING-DIODES
VAPOR-PHASE EPITAXY
FILMS
DISLOCATIONS
DENSITY
GROWTH
LAYERS
Changing the size and shape of Ge island by chemical etching
期刊论文
journal of crystal growth, 2001, 卷号: 231, 期号: 1-2, 页码: 17-21
Gao F
;
Huang CJ
;
Huang DD
;
Li JP
;
Sun DZ
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
收藏
  |  
浏览/下载:175/52
  |  
提交时间:2010/08/12
atomic force microscopy
etching
nanostructures
molecular beam epitaxy
semiconducting germanium
semiconducting silicon
QUANTUM DOTS
INAS
GROWTH
STRAIN
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