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The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition 期刊论文
vacuum, 2008, 卷号: 82, 期号: 5, 页码: 495-500
Zhu, BL; Sun, XH; Zha, XZ; Su, FH; Li, GH; Wu, XG; Wu, J; Wu, R; Liu, J
收藏  |  浏览/下载：46/1  |  提交时间：2010/03/08
Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文
journal of crystal growth, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352
作者:  Zhang SM
收藏  |  浏览/下载：230/30  |  提交时间：2010/08/12
Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 416-423
Hu GQ; Kong X; Wan L; Wang YQ; Duan XF; Lu Y; Liu XL
收藏  |  浏览/下载：25/0  |  提交时间：2010/08/12
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) 期刊论文
journal of crystal growth, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
作者:  Zhao DG
收藏  |  浏览/下载：299/12  |  提交时间：2010/08/12
Formation mechanism of amorphous layer at the interface of Si(111) substrate and AlN buffer layer for GaN 期刊论文
journal of materials science letters, 2003, 卷号: 22, 期号: 22, 页码: 1581-1583
Hu GQ; Kong X; Wang YQ; Wan L; Duan XF; Lu Y; Liu XL
收藏  |  浏览/下载：59/0  |  提交时间：2010/08/12
Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD 期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253
作者:  Zhang SM
收藏  |  浏览/下载：293/3  |  提交时间：2010/08/12
X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates 期刊论文
journal of crystal growth, 2003, 卷号: 254, 期号: 1-2, 页码: 23-27
Shen XM; Wang YT; Zheng XH; Zhang BS; Chen J; Feng G; Yang H
收藏  |  浏览/下载：111/0  |  提交时间：2010/08/12
Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD 期刊论文
journal of crystal growth, 2002, 卷号: 242, 期号: 1-2, 页码: 124-128
Zheng XH; Feng ZH; Wang YT; Zheng WL; Jia QJ; Jiang XM; Yang H; Liang JW
收藏  |  浏览/下载：125/0  |  提交时间：2010/08/12
Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE 期刊论文
journal of crystal growth, 2001, 卷号: 222, 期号: 1-2, 页码: 110-117
Xu HZ; Takahashi K; Wang CX; Wang ZG; Okada Y; Kawabe M; Harrison I; Foxon CT
收藏  |  浏览/下载：54/0  |  提交时间：2010/08/12
Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes 期刊论文
journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 551-555
作者:  Liu XF
收藏  |  浏览/下载：27/0  |  提交时间：2010/08/12

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