QQ客服 官方微博 反馈留言

浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307 作者:  Zhang SM;  Wang LJ;  Wang YT;  Yang H;  Wang LJ 收藏  |  浏览/下载：107/3  |  提交时间：2010/04/05 GaN  light emitting diode  surface treatment  leakage current  THREADING DISLOCATION DENSITIES  LAYERS  NI/AU  LEDS   Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802 Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long) 收藏  |  浏览/下载：73/2  |  提交时间：2010/05/24 Ga vacancies  MOCVD  GaN  Schottky barrier photodetector  REVERSE-BIAS LEAKAGE  MOLECULAR-BEAM EPITAXY  P-N-JUNCTIONS  POSITRON-ANNIHILATION  DIODES  FILMS   Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 3, 页码: art.no.033503 Wang RX (Wang R. X.); Xu SJ (Xu S. J.); Djurisic AB (Djurisic A. B.); Beling CD (Beling C. D.); Cheung CK (Cheung C. K.); Cheung CH (Cheung C. H.); Fung S (Fung S.); Zhao DG (Zhao D. G.); Yang H (Yang H.); Tao XM (Tao X. M.) 收藏  |  浏览/下载：26/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  N-TYPE GAN  ELECTRICAL-PROPERTIES  BIAS LEAKAGE  DIODES  OXYGEN   A 16-term error model based on linear equations of voltage and current variables 期刊论文 ieee transactions on microwave theory and techniques, 2006, 卷号: 54, 期号: 4, 页码: 1464-1469 Silvonen K; Zhu NH; Liu Y 收藏  |  浏览/下载：54/0  |  提交时间：2010/04/11 calibration  deembedding  error model  15 term  four-port  network analyzer  parasitic  scattering parameter  16 term  NETWORK-ANALYZER CALIBRATION  SCATTERING-PARAMETER  LOAD IMPEDANCES  LEAKAGE ERRORS  COMPLEX SOURCE  T-PARAMETERS  S-PARAMETERS  CONVERSIONS  DEVICES  ABCD   Native-oxidized InAlAs blocking layer buried heterostructure InGaAsP-InP MQW laser for high-temperature operation 期刊论文 ieee photonics technology letters, 1999, 卷号: 11, 期号: 1, 页码: 3-5 Jie WZ; Jin CS; Fan Z; Jie WX; Wei W; Han WR 收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12 CVD  insulation  leakage currents  oxidation  quantum-well lasers  semiconductor heterojunctions  thermal factors  DIODES  LEAKAGE CURRENT