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Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO 期刊论文
PHYSICAL REVIEW LETTERS, 2010, 卷号: 104, 期号: 13, 页码: 137201
作者:  Yi, JB;  Lim, CC;  Xing, GZ;  Fan, HM;  Van, LH
收藏  |  浏览/下载:15/0  |  提交时间:2016/06/29


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