Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO

	Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO
	Yi, JB; Lim, CC; Xing, GZ; Fan, HM; Van, LH; Huang, SL; Yang, KS; Huang, XL; Qin, XB; Wang, BY
刊名	PHYSICAL REVIEW LETTERS
	2010
卷号	104 期号:13 页码:137201
通讯作者	[Yi, J. B. ; Fan, H. M. ; Huang, X. L. ; Zhang, H. T. ; Ding, J.] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 119260, Singapore ; [Lim, C. C. ; Yang, K. S. ; Gao, X. Y. ; Liu, T. ; Wee, A. T. S. ; Feng, Y. P.] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore ; [Xing, G. Z. ; Huang, S. L. ; Wu, T. ; Wang, L.] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637371, Singapore ; [Van, L. H.] Natl Univ Singapore, Nanosci & Nanotechnol Initiat, Singapore 119260, Singapore ; [Yang, K. S.] Shandong Univ, Dept Phys, Jinan 250100, Peoples R China ; [Qin, X. B. ; Wang, B. Y.] Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China
英文摘要	We demonstrate, both theoretically and experimentally, that cation vacancy can be the origin of ferromagnetism in intrinsic dilute magnetic semiconductors. The vacancies can be controlled to tune the ferromagnetism. Using Li-doped ZnO as an example, we found that while Li itself is nonmagnetic, it generates holes in ZnO, and its presence reduces the formation energy of Zn vacancy, and thereby stabilizes the zinc vacancy. Room temperature ferromagnetism with p type conduction was observed in pulsed laser deposited ZnO: Li films with certain doping concentration and oxygen partial pressure.
学科主题	Physics
类目[WOS]	Physics, Multidisciplinary
研究领域[WOS]	Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000276260800041
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/240999]
专题	高能物理研究所_多学科研究中心高能物理研究所_加速器中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Yi, JB,Lim, CC,Xing, GZ,et al. Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO[J]. PHYSICAL REVIEW LETTERS,2010,104(13):137201.
APA	Yi, JB.,Lim, CC.,Xing, GZ.,Fan, HM.,Van, LH.,...&王宝义.(2010).Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO.PHYSICAL REVIEW LETTERS,104(13),137201.
MLA	Yi, JB,et al."Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO".PHYSICAL REVIEW LETTERS 104.13(2010):137201.