CORC

在结果中检索

CORC

浏览/检索结果: 共32条，第1-10条 帮助

限定条件                
已选(0)清除 条数/页：   排序方式：
Insulator-quantum Hall conductor transition in high electron density gated InGaAs/InAlAs quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 6, 页码: 63701-63701
Gao, KH; Yu, G; Zhou, YM; Wei, LM; Lin, T; Shang, LY; Sun, L; Yang, R; Zhou, WZ; Dai, N; Chu, JH; Austing, DG; Gu, Y; Zhang, YG(张永刚）
收藏  |  浏览/下载：11/0  |  提交时间：2012/03/24
Insulator-quantum Hall conductor transition in high electron density gated InGaAs/InAlAs quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 6, 页码: 63701
Gao, KH; Yu, G; Zhou, YM; Wei, LM; Lin, T; Shang, LY; Sun, L; Yang, R; Zhou, WZ; Dai, N; Chu, JH; Austing, DG; Gu, Y; Zhang, YG（重点实验室）
收藏  |  浏览/下载：7/0  |  提交时间：2013/05/10
Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 15, 页码: 152107-152107
Gao, KH; Zhou, WZ; Zhou, YM; Yu, G; Lin, T; Guo, SL; Chu, JH; Dai, N; Gu, Y; Zhang, YG(张永刚）; Austing, DG
收藏  |  浏览/下载：5/0  |  提交时间：2012/03/24
Experimental study of weak antilocalization effects in a two-dimensional system: Anomalous dephasing rate 期刊论文
PHYSICAL REVIEW B, 2009, 卷号: 79, 期号: 8, 页码: 85310-85310
Gao, KH; Yu, G; Zhou, YM; Zhou, WZ; Lin, T; Chu, JH; Dai, N; Austing, DG; Gu, Y; Zhang, YG(张永刚）
收藏  |  浏览/下载：10/0  |  提交时间：2012/03/24
Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 15, 页码: 152107
Gao, KH; Zhou, WZ; Zhou, YM; Yu, G; Lin, T; Guo, SL; Chu, JH; Dai, N; Gu, Y; Zhang, YG（重点实验室）; Austing, DG
收藏  |  浏览/下载：10/0  |  提交时间：2013/05/10
Experimental study of weak antilocalization effects in a two-dimensional system: Anomalous dephasing rate 期刊论文
PHYSICAL REVIEW B, 2009, 卷号: 79, 期号: 8, 页码: 85310
Gao, KH; Yu, G; Zhou, YM; Zhou, WZ; Lin, T; Chu, JH; Dai, N; Austing, DG; Gu, Y; Zhang, YG（重点实验室）
收藏  |  浏览/下载：7/0  |  提交时间：2013/05/10
Engineering of interfacial layer between HfAl2O5 dielectric film and Si with a Ti-capping layer 期刊论文
THIN SOLID FILMS, 2008, 卷号: 517, 期号: 1, 页码: 462-464
Cheng, XH; Song, ZR; Xing, YM; Yu, YH; Shen, DS
收藏  |  浏览/下载：12/0  |  提交时间：2012/03/24
Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectrics 期刊论文
THIN SOLID FILMS, 2008, 卷号: 517, 期号: 1, 页码: 465-467
Song, ZR; Cheng, XH; Zhang, EX; Xing, YM; Yu, YH; Zhang, ZX; Wang, X; Shen, DS
收藏  |  浏览/下载：14/0  |  提交时间：2012/03/24
Effect of STI-induced mechanical stress on leakage current in deep submicron CMOS devices 期刊论文
CHINESE PHYSICS, 2007, 卷号: 16, 期号: 10, 页码: 3104-3107
Li, R; Yu, LJ; Dong, YM; Wang, CD
收藏  |  浏览/下载：5/0  |  提交时间：2012/03/24
A comprehensive study of reducing the STI mechanical stress effect on channel-width-dependent I-dsat 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 卷号: 22, 期号: 12, 页码: 1292-1297
Li, R; Yu, LJ; Xin, HW; Dong, YM; Tao, K; Wang, CD
收藏  |  浏览/下载：9/0  |  提交时间：2012/03/24

©版权所有 ©2017 CSpace - Powered by CSpace