Insulator-quantum Hall conductor transition in high electron density gated InGaAs/InAlAs quantum wells

	Insulator-quantum Hall conductor transition in high electron density gated InGaAs/InAlAs quantum wells
	Gao, KH ; Yu, G ; Zhou, YM ; Wei, LM ; Lin, T ; Shang, LY ; Sun, L ; Yang, R ; Zhou, WZ ; Dai, N ; Chu, JH ; Austing, DG ; Gu, Y ; Zhang, YG(张永刚）
刊名	JOURNAL OF APPLIED PHYSICS
	2010
卷号	108 期号:6 页码:63701-63701
关键词	GLOBAL PHASE-DIAGRAM MAGNETIC-FIELD 2 DIMENSIONS METALLIC BEHAVIOR HETEROSTRUCTURE UNIVERSALITY SYSTEMS MAGNETOTRANSPORT DELOCALIZATION LIQUID
ISSN号	0021-8979
通讯作者	Gao, KH, E China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200062, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94738]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Gao, KH,Yu, G,Zhou, YM,et al. Insulator-quantum Hall conductor transition in high electron density gated InGaAs/InAlAs quantum wells[J]. JOURNAL OF APPLIED PHYSICS,2010,108(6):63701-63701.
APA	Gao, KH.,Yu, G.,Zhou, YM.,Wei, LM.,Lin, T.,...&Zhang, YG.(2010).Insulator-quantum Hall conductor transition in high electron density gated InGaAs/InAlAs quantum wells.JOURNAL OF APPLIED PHYSICS,108(6),63701-63701.
MLA	Gao, KH,et al."Insulator-quantum Hall conductor transition in high electron density gated InGaAs/InAlAs quantum wells".JOURNAL OF APPLIED PHYSICS 108.6(2010):63701-63701.