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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 专题：大连理工大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Electric and dielectric characteristics of Al/ZrO2/IL/n-Si MOS capacitors using three-frequency correction method 期刊论文 RESULTS IN PHYSICS, 2019, 卷号: 12, 页码: 681-686 作者:  Zhang, Xizhen;  Pan, Xiuyu;  Cheng, Yi;  Zhang, Sujuan;  Zhu, Huichao 收藏  |  浏览/下载：19/0  |  提交时间：2019/12/02 MOS capacitor  Five-element model  Frequency dispersion  Three-frequency correction  Parameter extraction  Dielectric characteristics   Recent advances in EAST physics experiments in support of steady-state operation for ITER and CFETR 期刊论文 NUCLEAR FUSION, 2019, 卷号: 59 作者:  Wan, B. N.;  Liang, Y.;  Gong, X. Z.;  Xiang, N.;  Xu, G. S. 收藏  |  浏览/下载：141/0  |  提交时间：2019/12/02 steady state  long pulse  high bootstrap current fraction  tokamak   Error analysis and frequency selection guidelines for three-frequency correction in MOS capacitors 期刊论文 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 卷号: 33 作者:  Zhang, Xizhen;  Zhang, Sujuan;  Pan, Xiuyu;  Zhu, Huichao;  Cheng, Chuanhui 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/02 MOS capacitor  three-frequency correction  five-element model  error analysis  frequency selection   Frequency dispersion analysis of thin dielectric MOS capacitor in a five-element model 期刊论文 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 卷号: 51 作者:  Zhang, Xizhen;  Zhang, Sujuan;  Zhu, Huichao;  Pan, Xiuyu;  Cheng, Chuanhui 收藏  |  浏览/下载：15/0  |  提交时间：2019/12/02 MOS capacitors  frequency dispersion  external frequency dispersion  intrinsic frequency dispersion  dielectric characteristics   Single frequency correction based on three-element model for thin dielectric MOS capacitor 期刊论文 SOLID-STATE ELECTRONICS, 2017, 卷号: 129, 页码: 97-102 作者:  Zhang, Xizhen;  Zhu, Huichao;  Cheng, Chuanhui;  Yu, Tao;  Zhang, Daming 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/02 MOS capacitors  Frequency dispersion  Single frequency correction  Parallel resistance  Series resistance  Dielectric loss tangent   A New MOS Capacitance Correction Method Based on Five-Element Model by Combining Double-Frequency C-V and I-V Measurements 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2016, 卷号: 37, 页码: 1328-1331 作者:  Zhang, Xizhen;  Cheng, Chuanhui;  Zhu, Huichao;  Yu, Tao;  Zhang, Daming 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/09 MOS capacitor  double-frequency correction  five-element model  interface layer  parallel resistance  series resistance