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浏览/检索结果: 共13条，第1-10条 帮助 限定条件 专题：大连理工大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate 期刊论文 JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2014, 卷号: 25, 页码: 267-272 作者:  Yang, Dechao;  Liang, Hongwei;  Qiu, Yu;  Shen, Rensheng;  Liu, Yang 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/09 Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching 期刊论文 APPLIED SURFACE SCIENCE, 2014, 卷号: 295, 页码: 26-30 作者:  Yang, Dechao;  Liang, Hongwei;  Qiu, Yu;  Shen, Rensheng;  Liu, Yang 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/09 Patterned sapphire substrate  Wet etching  Crystallographic planes  Etching zones  Etching rate   Crack-free ultraviolet AlGaN/GaN distributed Bragg reflectors grown by MOVPE on 6H-SiC(0001) 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2014, 卷号: 70, 页码: 54-60 作者:  Wang, Dongsheng;  Liang, Hongwei;  Tao, Pengcheng;  Zhang, Kexiong;  Song, Shiwei 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/09 Distributed Bragg reflectors  Metal organic vapor phase epitaxy  Double AlN/AlGaN layer buffer  Ultraviolet   Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth 期刊论文 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 卷号: 116, 页码: 1561-1566 作者:  Zhang, Kexiong;  Liang, Hongwei;  Shen, Rensheng;  Song, Shiwei;  Wang, Dongsheng 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/09 Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal 期刊论文 JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 卷号: 24, 页码: 2750-2754 作者:  Cheng, Yi;  Liang, Hongwei;  Shen, Rensheng;  Xia, Xiaochuan;  Wang, Bo 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11 Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment 期刊论文 JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 卷号: 24, 页码: 3299-3302 作者:  Song, Shiwei;  Shen, Rensheng;  Liang, Hongwei;  Liu, Yang;  Xia, Xiaochuan 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/11 Influence of N-2 and O-2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu films 期刊论文 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2013, 卷号: 16, 页码: 1303-1307 作者:  Cheng, Yi;  Liang, Hongwei;  Liu, Yang;  Xia, Xiaochuan;  Shen, Rensheng 收藏  |  浏览/下载：12/0  |  提交时间：2019/12/11 Cu-doped Ga2O3 thin film  X-ray diffraction  Optical bandgap  Amorphous phase  Surface morphology   Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode 期刊论文 JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 卷号: 24, 页码: 2716-2720 作者:  Yang, Dechao;  Liang, Hongwei;  Qiu, Yu;  Song, Shiwei;  Liu, Yang 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11 Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer 期刊论文 JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 卷号: 24, 页码: 2923-2927 作者:  Song, Shiwei;  Liu, Yang;  Liang, Hongwei;  Yang, Dechao;  Zhang, Kexiong 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11 Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates 期刊论文 JOURNAL OF TESTING AND EVALUATION, 2013, 卷号: 41, 页码: 798-803 作者:  Zhang, Kexiong;  Liang, Hongwei;  Song, Shiwei;  Yang, Dechao;  Shen, Rensheng 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/11 GaN  metalorganic chemical vapor deposition  stress state  dislocations