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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 内容类型：期刊论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Investigating Company’s Technical Development Directions Based on Internal Knowledge Inheritance and Inventor Capabilities: The Case of Samsung Electronics 期刊论文 Sustainability, 2022, 卷号: 14, 期号: 5, 页码: 3117 作者:  Han F(韩芳);  Yoon, Sejun;  Raghavan, Nagarajan;  Park, Hyunseok 收藏  |  浏览/下载：67/0  |  提交时间：2022/03/18 Knowledge Persistence  Main Path Analysis  Social Network Analysis  Corporate Technology Strategy  Technology Forecasting   Recommended Methods to Study Resistive Switching Devices 期刊论文 ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: 5, 期号: 1 作者:  Lanza, Mario;  Wong, H-S Philip;  Pop, Eric;  Ielmini, Daniele;  Strukov, Dimitri 收藏  |  浏览/下载：95/0  |  提交时间：2019/12/18 HEXAGONAL BORON-NITRIDE  ALIGNED CARBON NANOTUBES  SPICE COMPACT MODEL  NONVOLATILE MEMORY  RRAM DEVICES  THIN-FILM  DIELECTRIC-BREAKDOWN  MEMRISTIVE BEHAVIOR  PHYSICAL MODEL  NANOSCALE   Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects 期刊论文 Advavced Science, 2018 作者:  xing wu;  kaihao yu;  Dongkyu cha;  Michel Bosman;  Nagarajan Raghavan 收藏  |  浏览/下载：17/0  |  提交时间：2019/04/10 Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack 期刊论文 nanotechnology, 2011 Wu, Xing; Pey, Kin-Leong; Raghavan, Nagarajan; Liu, Wen-Hu; Li, Xiang; Bai, Ping; Zhang, Gang; Bosman, Michel 收藏  |  浏览/下载：6/0  |  提交时间：2015/11/16 TRANSITION-METAL OXIDES  DIELECTRIC-BREAKDOWN  SILICON DIOXIDE  THIN-FILMS  MEMORY  RELIABILITY  NANOFILAMENTS  FABRICATION  DEVICES  LAYERS