Using post-breakdown conduction study in a MIS structure to better   understand the resistive switching mechanism in an MIM stack

doi:10.1088/0957-4484/22/45/455702

CORC > 北京大学 > 信息科学技术学院

	Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack
	Wu, Xing ; Pey, Kin-Leong ; Raghavan, Nagarajan ; Liu, Wen-Hu ; Li, Xiang ; Bai, Ping ; Zhang, Gang ; Bosman, Michel
刊名	nanotechnology
	2011
关键词	TRANSITION-METAL OXIDES DIELECTRIC-BREAKDOWN SILICON DIOXIDE THIN-FILMS MEMORY RELIABILITY NANOFILAMENTS FABRICATION DEVICES LAYERS
DOI	10.1088/0957-4484/22/45/455702
英文摘要	We apply our understanding of the physics of failure in the post-breakdown regime of high-kappa dielectric-based conventional logic transistors having a metal-insulator-semiconductor (MIS) structure to interpret the mechanism of resistive switching in resistive random-access memory (RRAM) technology metal-insulator-metal (MIM) stacks. Oxygen vacancies, gate metal migration and metal filament formation in the gate dielectric which constitute the chemistry of breakdown in the post-breakdown stage of logic gate stacks are attributed to be the mechanisms responsible for the SET process in RRAM technology. In this paper, we draw an analogy between the breakdown study in logic devices and filamentation physics in resistive non-volatile memory.; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; SCI(E); EI; 5; ARTICLE; 45; 22
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/394117]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wu, Xing,Pey, Kin-Leong,Raghavan, Nagarajan,et al. Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack[J]. nanotechnology,2011.
APA	Wu, Xing.,Pey, Kin-Leong.,Raghavan, Nagarajan.,Liu, Wen-Hu.,Li, Xiang.,...&Bosman, Michel.(2011).Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack.nanotechnology.
MLA	Wu, Xing,et al."Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack".nanotechnology (2011).