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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Feature Extraction Method for Fault Diagnosis of Rotating Machinery Based on Wavelet and LLE 会议论文 作者:  Lu, Na;  Zhang, Guangtao;  Cheng, Yuanchu;  Wang, Xingfang 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/05 Feature extraction  Rotating machinery  Fault diagnosis  Wavelet  LLE   Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications 会议论文 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Sun, G (Sun, Guosheng); Ning, J (Ning, Jin); Liu, X (Liu, Xingfang); Zhao, Y (Zhao, Yongmei); Li, J (Li, Jiaye); Wang, L (Wang, Lei); Zhao, W (Zhao, Wanshun); Wang, L (Wang, Liang) 收藏  |  浏览/下载：87/29  |  提交时间：2010/03/29 polycrystalline 3C-SiC  resonator  doping  SILICON-CARBIDE   Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：100/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes   AMS measurements of Be-10 and C-14 in loess profile at Donglingshan, Beijing (CPCI-S收录) 会议论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 作者:  Ali, Naveed[1,2];  Shen, Chengde[3];  Ding, Ping[3];  Fu, Dongpo[1,2];  Wang, Ning[3] 收藏  |  浏览/下载：1/0  |  提交时间：2019/04/16 Accelerator mass spectrometry  Loess  Be-10 concentration  Paleoclimate