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The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yang, H; Chen, Y; Wang, LB; Yi, XY; Fan, JM; Liu, ZQ; Yang, FH; Wang, LC; Wang, GH; Zeng, YP; Li, JM
收藏  |  浏览/下载:47/0  |  提交时间:2010/03/09
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM
收藏  |  浏览/下载:43/0  |  提交时间:2010/03/09
Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Li, Y; Yi, XY; Wang, XD; Guo, JX; Wang, LC; Wang, GH; Yang, FH; Zeng, YP; Li, JM
收藏  |  浏览/下载:50/0  |  提交时间:2010/03/09
GaN  LED  plasma  damage  etch  ICP  PECVD  
High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers 会议论文
international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99), beijing, peoples r china, jun 13-18, 1999
Chen LH; Xu ZT; Ma XY; Zhang JM; Yang GW; Xu JY
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15
High efficiency, low vertical divergence angle 980nnn Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers 会议论文
conference on in-plane semiconductor lasers iv, san jose, ca, jan 24-25, 2000
Xiu ZT; Zhang JM; Ma XY; Yang GW; Shen GD; Chen LH
收藏  |  浏览/下载:61/0  |  提交时间:2010/10/29
SQW LASERS  INGAASP  POWER  FIBER  NM  
650nm AlGaInP quantum well lasers for the application of DVD 会议论文
spie conference on photonics technology into the 21st century - semiconductors, microstructures, and nanostructures, singapore, singapore, dec 01-03, 1999
Chen LH; Ma XY; Guo L; Ma J; Ding HY; Cao Q; Wang LM; Zhang GZ; Yang YL; Wang GH; Tan MQ
收藏  |  浏览/下载:13/0  |  提交时间:2010/10/29
High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD 会议论文
spie conference on optoelectronic materials and devices, taipei, taiwan, jul 09-11, 1998
Ma XY; Cao Q; Wang ST; Guo L; Lian P; Wang LM; Zhang XY; Yang YL; Zhang HQ; Wang GH; Chen LH
收藏  |  浏览/下载:15/0  |  提交时间:2010/10/29
High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method 会议论文
semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998
Ma XY; Cao Q; Wang ST; Guo L; Wang ZM; Wang LM; He GP; Yang YL; Zhang HQ; Zhou XN; Chen LH
收藏  |  浏览/下载:13/0  |  提交时间:2010/10/29
Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs 会议论文
semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998
Yang GW; Xu ZT; Xu JY; Ma XY; Zhang JM; Chen LH
收藏  |  浏览/下载:8/0  |  提交时间:2010/10/29
The study of single mode 650nm AlGaInP quantum well laser diodes for DVD 会议论文
semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998
Ma XY; Cao Q; Wang ST; Guo L; Wang LM; Yang YL; Zhang HQ; Zhang XY; Chen LH
收藏  |  浏览/下载:15/0  |  提交时间:2010/10/29


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