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Bottom-Gate Approach for All Basic Logic Gates Implementation by a Single-Type IGZO-Based MOS Transistor with Reduced Footprint 期刊论文
ADVANCED SCIENCE, 2020, 卷号: 7, 期号: 6
作者:  Qi, Shaocheng;  Cunha, Joao;  Guo, Tian-Long;  Chen, Peiqin;  Zaccaria, Remo Proietti
收藏  |  浏览/下载:13/0  |  提交时间:2020/12/16
Modeling and Mechanism of Enhanced Performance of In-Ga-Zn-O Thin-Film Transistors with Nanometer Thicknesses under Temperature Stress 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2020, 卷号: 124, 期号: 41, 页码: 22793-22798
作者:  Dai, Chaoqi;  Qi, Guoqiang;  Qiao, Hai;  Wang, Weiliang;  Xiao, Han
收藏  |  浏览/下载:16/0  |  提交时间:2020/12/16


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