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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Experimental Test of the State Estimation-Reversal Tradeoff Relation in General Quantum Measurements 期刊论文 physical review x, 2014, 卷号: 4, 期号: 5, 页码: 021043 Chen, G; Zou, Y; Xu, XY; Tang, JS; Li, YL; Xu, JS; Han, YJ; Li, CF; Guo, GC; Ni, HQ; Yu, Y; Li, MF; Zha, GW; Niu, ZC; Kedem, Y 收藏  |  浏览/下载：26/0  |  提交时间：2015/04/02 Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application 期刊论文 materials, 2012, 卷号: 5, 期号: 12, 页码: 2917-2926 Shi YB (Shi, Yunbo); Guo H (Guo, Hao); Ni HQ (Ni, Haiqiao); Xue CY (Xue, Chenyang); Niu ZC (Niu, Zhichuan); Tang J (Tang, Jun); Liu J (Liu, Jun); Zhang WD (Zhang, Wendong); He JF (He, Jifang); Li MF (Li, Mifeng); Yu Y (Yu, Ying) 收藏  |  浏览/下载：22/0  |  提交时间：2013/03/26 Defect of Te-doped GaSb layers grown by molecular beam epitaxy 期刊论文 journal of infrared and millimeter waves, 2012, 卷号: 31, 期号: 4, 页码: 298-301 Chen Y (Chen Yan); Deng AH (Deng Ai-Hong); Tang B (Tang Bao); Wang GW (Wang Guo-Wei); Xu YQ (Xu Ying-Qiang); Niu ZC (Niu Zhi-Chuan) 收藏  |  浏览/下载：12/0  |  提交时间：2013/04/02 Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 7, 页码: art. no. 077305 Wang GW (Wang Guo-Wei); Xu YQ (Xu Ying-Qiang); Guo J (Guo Jie); Tang B (Tang Bao); Ren ZW (Ren Zheng-Wei); He ZH (He Zhen-Hong); Niu ZC (Niu Zhi-Chuan) 收藏  |  浏览/下载：26/0  |  提交时间：2010/08/17 IR DETECTION MODULES  INAS   Direct observation of excitonic polaron in InAs/GaAs quantum dots 期刊论文 epl, 2010, 卷号: 90, 期号: 3, 页码: art. no. 37004 Gong M (Gong Ming); Chen G (Chen Geng); He LX (He Lixin); Li CF (Li Chuan-Feng); Tang JS (Tang Jian-Shun); Sun FW (Sun Fang-Wen); Niu ZC (Niu Zhi-Chuan); Huang SS (Huang She-Song); Xiong YH (Xiong Yong-Hua); Ni HQ (Ni Hai-Qiao); Guo GC (Guo Guang-Can) 收藏  |  浏览/下载：131/3  |  提交时间：2010/07/18 PHONON COUPLING REGIME   GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy 期刊论文 chinese physics letters, 2009, 卷号: 26, 期号: 2, 页码: art. no. 028102 作者:  Tang B;  Wang GW;  Xu YQ 收藏  |  浏览/下载：159/45  |  提交时间：2010/03/08 INAS/GA1-XINXSB SUPERLATTICE  GASB  HETEROJUNCTIONS  PHOTODIODES  SEGREGATION  LAYERS  INAS  ALSB   Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers 期刊论文 chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 018101 作者:  Xu YQ;  Tang B 收藏  |  浏览/下载：221/40  |  提交时间：2010/03/08 SURFACE-MORPHOLOGY  GROWTH  SUPERLATTICES  HETEROSTRUCTURES  TEMPERATURE  DETECTORS  GAAS(100)  FILMS  INAS  INSB   Long-wavelength light emission from self-assembled heterojunction quantum dots 期刊论文 journal of applied physics, 2008, 卷号: 103, 期号: 9, 页码: art. no. 094315 Zhou, ZQ; Xu, YQ; Hao, RT; Tang, B; Ren, ZW; Niu, ZC 收藏  |  浏览/下载：43/4  |  提交时间：2010/03/08 MU-M  GAAS  GROWTH  EPITAXY