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Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong); Li JB (Li Jingbo); Li SS (Li Shu-Shen); Peng HW (Peng Haowei); Xia JB (Xia Jian-Bai); Wang LW (Wang Lin-Wang); Wei SH (Wei Su-Huai)
收藏  |  浏览/下载：47/0  |  提交时间：2010/12/27
Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 8, 页码: art.no.084510
Jiang XW (Jiang Xiang-Wei); Deng HX (Deng Hui-Xiong); Li SS (Li Shu-Shen); Luo JW (Luo Jun-Wei); Wang LW (Wang Lin-Wang)
收藏  |  浏览/下载：159/62  |  提交时间：2010/03/08
Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4097-4100
Lin, GQ; Zeng, YP; Wang, XL; Liu, HX
收藏  |  浏览/下载：19/0  |  提交时间：2010/03/08
Effects of the wave function localization in AlInGaN quaternary alloys 期刊论文
applied physics letters, 2007, 卷号: 91, 期号: 6, 页码: art.no.061125
Wang, F (Wang, Fei); Li, SS (Li, Shu-Shen); Xia, JB (Xia, Jian-Bai); Jiang, HX (Jiang, H. X.); Lin, JY (Lin, J. Y.); Li, J (Li, Jingbo); Wei, SH (Wei, Su-Huai)
收藏  |  浏览/下载：40/0  |  提交时间：2010/03/29
Content analyses in GaMnAs by double-crystal X-ray diffraction 期刊论文
chinese science bulletin, 2002, 卷号: 47, 期号: 4, 页码: 274-275
Chen NF; Xiu HX; Yang JL; Wu JL; Zhong XR; Lin LY
收藏  |  浏览/下载：96/12  |  提交时间：2010/08/12
Structural, optical and intraband absorption properties of vertically aligned In0.32Ga0.68As/GaAs quantum dots superlattices 期刊论文
physica e-low-dimensional systems & nanostructures, 2001, 卷号: 11, 期号: 4, 页码: 384-390
Zhuang QD; Yoon SF; Li HX; Li JM; Zeng YP; Kong MY; Lin LY
收藏  |  浏览/下载：93/7  |  提交时间：2010/08/12
Investigation on anisotropy of vertical-cavity surface-emitting lasers 期刊论文
journal of applied physics, 2000, 卷号: 88, 期号: 5, 页码: 3102-3104
Liu SA; Lin SM; Cheng P; Zhang GB; Wang QM; Chen Y; Li GH; Han HX
收藏  |  浏览/下载：37/0  |  提交时间：2010/08/12
Intraband absorption in the 8-12 mu m band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice 期刊论文
applied physics letters, 1998, 卷号: 73, 期号: 25, 页码: 3706-3708
Zhuang QD; Li JM; Li HX; Zeng YP; Pan L; Chen YH; Kong MY; Lin LY
收藏  |  浏览/下载：25/0  |  提交时间：2010/08/12

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