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Strong Spin-Orbit Interactions in an InAlAs/InGaAs/InAlAs Two-Dimensional Electron Gas by Weak Antilocalization Analysis 期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 6, 页码: art. no. 063004
Sun L; Zhou WZ; Yu GL; Shang LY; Gao KH; Zhou YM; Lin T; Cui LJ; Zeng YP; Chu JH
收藏  |  浏览/下载:73/0  |  提交时间:2010/03/08
Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands 期刊论文
acta physica sinica, 2008, 卷号: 57, 期号: 6, 页码: 3818-3822
Shang, LY; Lin, T; Zhou, WZ; Guo, SL; Li, DL; Gao, HL; Cui, LJ; Zeng, YP; Chu, JH
收藏  |  浏览/下载:84/20  |  提交时间:2010/03/08
Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si delta-doped on the barriers 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 7, 页码: 4143-4147
Zhou WZ (Zhou Wen-Zheng); Lin T (Lin Tie); Shang LY (Shang Li-Yan); Huang ZM (Huang Zhi-Ming); Zhu B (Zhu Bo); Cui LJ (Cui Li-Jie); Gao HL (Gao Hong-Ling); Li DL (Li Dong-Lin); Guo SL (Guo Shao-Ling); Gui YS (Gui Yong-Sheng); Chu JH (Chu Jun-Hao)
收藏  |  浏览/下载:138/0  |  提交时间:2010/03/29
Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements 期刊论文
applied physics letters, 2002, 卷号: 80, 期号: 17, 页码: 3132-3134
Cui LJ; Zeng YP; Wang BQ; Zhu ZP; Lin LY; Jiang CP; Guo SL; Chu JH
收藏  |  浏览/下载:86/27  |  提交时间:2010/08/12
Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates 期刊论文
journal of applied physics, 2002, 卷号: 91, 期号: 4, 页码: 2429-2432
Cui LJ; Zeng YP; Wang BQ; Wu J; Zhu ZP; Lin LY
收藏  |  浏览/下载:70/6  |  提交时间:2010/08/12
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