CORC

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CORC

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Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres 期刊论文
materials letters, 2012, 卷号: 68, 页码: 327-330
Wei, TB; Chen, Y; Hu, Q; Yang, JK; Huo, ZQ; Duan, RF; Wang, JX; Zeng, YP; Li, JM; Liao, YX; Yin, FT
收藏  |  浏览/下载：20/0  |  提交时间：2013/03/17
Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands 期刊论文
optics express, 2011, 卷号: 19, 期号: 2, 页码: 1065-1071
作者:  Wei TB
收藏  |  浏览/下载：43/4  |  提交时间：2011/07/05
Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC 期刊论文
chinese physics, 2005, 卷号: 14, 期号: 3, 页码: 599-603
Xin G; Sun, GS; Li JM; Zhang YX; Lei W; Zhao WS; Zeng YP
收藏  |  浏览/下载：22/0  |  提交时间：2010/03/17
Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces 会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Sun, GS; Ning, J; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM
收藏  |  浏览/下载：206/60  |  提交时间：2010/03/29
Electrical properties and electroluminescence of 4H-SiC p-n junction diodes 期刊论文
journal of rare earths, 2004, 卷号: 22 sp.iss.si, 期号: 0, 页码: 275-278
Sun, GS; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM
收藏  |  浏览/下载：87/0  |  提交时间：2010/03/17
4H-SiC  
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 766-769
Gao F; Lin YX; Huang DD; Li JP; Sun DZ; Kong MY; Zeng YP; Li JM; Lin LY
收藏  |  浏览/下载：97/14  |  提交时间：2010/08/12
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Gao F; Lin YX; Huang DD; Li JP; Sun DZ; Kong MY; Zeng YP; Li JM; Lin LY
收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15
The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文
journal of crystal growth, 2000, 卷号: 220, 期号: 4, 页码: 457-460
Gao F; Huang DD; Li JP; Lin YX; Kong MY; Li JM; Zeng YP; Lin LY
收藏  |  浏览/下载：89/0  |  提交时间：2010/08/12
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